2SD1621_15 KEXIN

Document overview

www.kexin.com.cn 1 Tran sistors NPN Transistors 2SD1621 ■ Features

Low collector-to-emitter saturation voltage.
Large current capacity and wide ASO.
Fast switching speed.
Complementary transistor with the 2SB1121 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 2 Collector current -pulse ICP 5 Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 30 Collector- emitter breakdown voltage VCEO Ic= 1 mA， RBE= ∞ 25 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 6 Collector-base cut-off current ICBO VCB= 20V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 4V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=1.5A, IB=75mA 0.18 0.4 Base - emitter saturation voltage VBE(sat) IC=1.5A, IB=75mA 0.85 1.2 VCE= 2V, IC= 100mA 100 560 VCE= 2V, IC= 1.5A 65 Turn-on time ton 60 Storage time tstg 500 Turn-off time toff 25 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 19 pF Transition frequency fT VCE= 10V, IC= 50mA 150 MHz V uA V See specified Test Circuit. ns DC current gain hFE ■ Classification of hfe(1) Type 2SD1621-R 2SD1621-S 2SD1621-T 2SD1621-U Range 100-200 140-280 200-400 280-560 Marking DDR DDS DDT DDU

www.kexin.com.cn2 Transistors NPN Transistors 2SD1621 Switching Time Test Circuit ■ Typical Characterisitics

www.kexin.com.cn 3 Transistors NPN Transistors 2SD1621 ■ Typical Characterisitics