2SD1621 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Very small size making it easy to provide highdensity, small-sized hybrid IC’s. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 30 V Collector-emitter voltage V CEO 25 V Emitter-base voltage V EBO 6V Collector current I C 2A Collector current (pulse) I CP 5A PC 500 mW PC* 1.3 W Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0 * Mounted on ceramic board(250mm2X0.8mm) Collector dissipation
www.kexin.com.cn 2SD1621 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current I CBO VCB =2 0V ,IE=0 0.1 ìA Emitter cutoff current I EBO VEB =4V ,I C=0 0.1 ìA DC current gain h FE VCE =2V,I C = 100 mA 100 560 Gain bandwidth product f T VCE =1 0V,I C = 50 mA 150 MHz Output capacitance C ob VCB = 10 V , f = 1.0MHz 19 pF Collector-emitter saturation voltage V CE(sat) IC =1 . 5A,IB = 75 mA 0.18 0.4 V Base-emitter saturation voltage V BE(sat) IC =1 . 5A,IB = 75 mA 0.85 1.2 V Collector-base breakdown voltage V (BR)CBO IC = 10ìA , IE =0 3 0 V Collector-emitter breakdown voltage V (BR)CEO IC =1 m A,RBE = 25 V Emitter-base breakdown voltage V (BR)EBO IE = 10ìA , IC =0 6 V Turn-on timie t on 60 ns Storage time t stg 500 ns Turn-off time t f 25 ns hFE Classification Marking Rank R S T U hFE 100 200 140 280 200 400 280 560 DD