2SD1620 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
Features
Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted. Large current capacity and highly resistant to breakdown. Excellent linearity of hFE in the region from low current to high current. Ultrasmall size supports high-density, ultrasmallsized hybrid IC designs. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 30 V Collector-emitter voltage V CEO 25 V Emitter-base voltage V EBO 6V Collector current I C 3A Collector current (pulse) I CP 5A PC 500 mW PC *1 . 3 W Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0 * Mounted on ceramic board(250mm2× 0.8mm) Collector dissipation Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current I CBO VCB =2 0V ,IE=0 100 nA Emitter cutoff current I EBO VEB =4V ,I C=0 100 nA DC current gain h FE VCE =2V,I C = 3 A 140 210 Gain bandwidth product f T VCE =1 0V,I C = 50 mA 200 MHz Output capacitance C ob VCB = 10 V , f = 1.0MHz 30 pF Collector-emitter saturation voltage V CE(sat) IC =3A,I B =6 0m A 0 . 3 0 . 4 V Collector-base breakdown voltage V (BR)CBO IC = 10ìA , IE =0 3 0 V Collector-emitter breakdown voltage V (BR)CEX IC =1 m A,VBE =3V 2 0 V Collector-emitter breakdown voltage V (BR)CEO IC =1 m A,RBE = 10 V Emitter-base breakdown voltage V (BR)EBO IE = 10ìA , IC =0 6 V