2SD1619_15 KEXIN

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www.kexin.com.cn 1 Transistors NPN Transistors 2SD1619 ■ Features

Very small size making it easy to provide highdensity, small-sized hybrid IC’s.
Complementary to 2SB1119 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 25 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1 Collector Current - Pulse ICP 2 Collector Power Dissipation 0.5 (Note.1) 1.3 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A PC W Note.1:Mounted on ceramic board (250mm ×0.8mm)2 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 25 Collector- emitter breakdown voltage VCEO Ic= 1 mA，RBE= ∞ 25 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 5 Collector-base cut-off current ICBO VCB= 20 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 4V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB=50 mA 0.1 0.3 Base - emitter saturation voltage VBE(sat) IC=500 mA, IB=50 mA 0.85 1.2 VCE= 2V, IC= 50 mA 100 560 VCE= 2V, IC= 1 A 40 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 15 pF Transition frequency fT VCE= 10V, IC= 50mA 180 MHz V uA DC current gain hFE V ■ Classification of hfe(1) Type 2SD1619-R 2SD1619-S 2SD1619-T 2SD1619-U Range 100-200 140-280 200-400 280-560 Marking DB R* DB S* DB T* DB U*

www.kexin.com.cn2 Transistors NPN Transistors 2SD1619 ■ Typical Characterisitics

www.kexin.com.cn 3 Tran sistors NPN Transistors 2SD1619 ■ Typical Characterisitics