2SD1616A KOOCHIN

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Technical content

2SD1616A TRANSISTOR (NPN) FEATURE Power dissipation MAXIMUM RATINGS (T A=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 750 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55 to150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO I C= 10μA , IE=0 120 V Collector-emitter breakdown voltage V(BR)CEO I C= 2mA , IB=0 60 V Emitter-base breakdown voltage V(BR)EBO I E= 10μA, IC=0 6 V Collector cut-off current ICBO V CB=60V, IE=0 0.1 μA Emitter cut-off current IEBO V EB=6V, IC=0 0.1 μA hFE1 V CE=2 V, IC= 100mA 135 600 DC current gain hFE2 V CE=2 V, I C= 1A 81 Collector-emitter saturation voltage * VCE(sat) I C= 1A, IB=50mA 0.3 V Base-emitter saturation voltage * VBE(sat) I C= 1A, IB=50mA 1.2 V Base-emitter voltage * VBE V CE= 2V, IC=50mA 0.6 0.7 V Transition frequency fT V CE=2 V, IC= 100mA 100 MHz Output capacitance Cob V CB=10 V,IE= 0, f=1MHz 19 pF Turn on time ton 0.07 μs Storage time tS 0.95 μs Fall time tF Vcc=10V, IC=100mA, IB1=-IB2=10mA 0.07 μs *pulse test: PW ≤350µS, δ≤2%. CLASSIFICATION OF h FE1 Rank L K U Range 135-270 200-400 300-600 1 2 3 TO-92 1. EMITTER 2. COLLECTOR 3. BSAE

Typical Characteristics 2SD1616A