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WEJ ELECTRONIC CO.,LTD 2SD1616A TRANSISTOR (NPN) FEATURE Power dissipation P CM: 0 . 7 5 W ( T a m b = 2 5 ℃ ) Collector current I CM: 1 A Collector-base voltage V (BR)CBO: 1 2 0 V Operating and storage junction temperature range T J, Tstg: -55 ℃ to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N M A X U N I T Collector-base breakdown voltage V(BR)CBO Ic= 10µA , I E=0 120 V Collector-emitter breakdown voltage V(BR)CEO I C= 2 mA , IB=0 60 V Emitter-base breakdown voltage V(BR)EBO I E= 10µA, IC=0 6 V Collector cut-off current ICBO V CB=60V, IE=0 0.1 µA Emitter cut-off current IEBO V EB=6V, IC=0 0.1 µA hFE1 V CE=2 V, I C= 100mA 135 600 DC current gain hFE2 V CE=2 V, I C= 1A 81 Collector-emitter saturation voltage * VCE(sat) I C= 1A, IB=50mA 0.3 V Base-emitter saturation voltage * VBE(sat) I C= 1A, IB=50mA 1.2 V Base-emitter voltage * VBE V CE= 2V, IC=50mA 0.7 V Transition frequency fT V CE=2 V, IC= 100mA 100 MHz Output capacitance Cob I E= 0, f=1MHz 25 pF Turn on time ton 0.07 typ ms Storage time tS 0.95 typ ms Fall time tF Vcc=10V, IC=100mA, IB1=-IB2=10mA VBE (OFF)=-2~ -3V 0.07 typ ms *pulse test: PW ≤ 350 µ S, δ≤ 2%. CLASSIFICATION OF h FE1 Rank L K U Range 135-270 200-400 300-600 1 2 3 TO-92 1. EMITTER 2. COLLECTOR 3. BSAE 2SD1616A Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS