2SD1616A DAYA

Document overview

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Technical content

TO-92 Plastic-Encapsulate Transistors 2SD1616A TRANSISTOR (NPN) FEATURE Power dissipation MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 120 V V CEO Collector-Emitter Voltage 60 V V EBO Emitter-Base Voltage 6 V I C Collector Current -Continuous 1 A P C Collector Power Dissipation 750 mW T j Junction Temperature 150 ℃ T stg Storage Temperature -55 to150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C = 10μA , I E =0 120 V Collector-emitter breakdown voltage V (BR)CEO I C = 2mA , I B =0 60 V Emitter-base breakdown voltage V (BR)EBO I E = 10μA, I C =0 6 V Collector cut-off current I CBO V CB =60V, I E =0 0.1 μA Emitter cut-off current I EBO V EB =6V, I C =0 0.1 μA h FE1 V CE =2 V, I C = 100mA 135 600 DC current gain h FE2 V CE =2 V, I C = 1A 81 Collector-emitter saturation voltage * V CE(sat) I C = 1A, I B =50mA 0.3 V Base-emitter saturation voltage * V BE(sat) I C = 1A, I B =50mA 1.2 V Base-emitter voltage * V BE V CE = 2V, I C =50mA 0.6 0.7 V Transition frequency f T V CE =2 V, I C = 100mA 100 MHz Output capacitance C ob V CB =10 V,I E = 0, f=1MHz 19 pF Turn on time t on 0.07 μs Storage time t S 0.95 μs Fall time t F Vcc=10V, I C =100mA, I =-I =10mA 0.07 μs *pulse test: PW ≤350µS, δ≤2%. CLASSIFICATION OF h FE1 Rank L K U Range 135-270 200-400 300-600 TO-92 1. EMITTER 2. COLLECTOR 3. BSAE

Typical Characteristics 2SD1616A