2SD1616A DCCOM

Document overview

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Technical content

DC COMPONENTS CO., LTD. TECHNICAL SPECIFICA TIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for audio frequency power amplifier and medium-speed switching applications. Pinning 1 = Emitter 2 = Collector 3 = Base TO-92 .022(0.56) .014(0.36) .050 (1.27) .148(3.76) .132(3.36) Typ .190(4.83) .170(4.33) .100 (2.54) Typ .050 (1.27)Typ .022(0.56) .014(0.36) .190(4.83) .170(4.33) .500 (12.70) Min 2oTyp 5oTyp. 2oTyp 3 2 1 5oTyp. Dimensions in inches and (millimeters) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 6 V Collector Current (DC) IC 1 A Collector Current (pulse) IC 2 A Total Power Dissipation PD 750 mW Junction Temperature TJ +150 oC Storage Temperature TSTG -55 to +150 oC Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 120 - - V IC=100µA Collector-Emitter Breakdown Voltage BVCEO 60 - - V IC=1mA Emitter-Base Breakdown Volatge BVEBO 6 - - V IE=10µA Collector Cutoff Current ICBO - - 0.1 µA VCB=60V Emitter Cutoff Current IEBO - - 0.1 µA VEB=6V Collector-Emitter Saturation Voltage(1) VCE(sat) - 0.15 0.3 V IC=1A, IB=50mA Base-Emitter Saturation Voltage(1) VBE(sat) - 0.9 1.2 V IC=1A, IB=50mA Base-Emitter On Voltage(1) VBE(on) 0.6 - 0.7 V IC=50mA, VCE=2V DC Current Gain(1) hFE1 135 - 600 - IC=100mA, VCE=2V hFE2 81 - - - IC=1A, VCE=2V Transition Frequency fT 100 160 - MHz IC=100mA, VCE=2V Output Capacitance Cob - - 19 pF VCB=10V, f=1MHz, IE=0 Turn-On Time ton - 0.07 - µS IC=100mA, VCE=10V Storage Time ts - 0.95 - µS IB1=IB2=10mA Fall Time tf - 0.07 - µS VBE(off)=-2 ~ -3V

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Rank Y G L Range 135~270 200~400 300~600 Classification of hFE1