2SD1616A

2SD1616_05 UTC

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UNISONIC TECHNOLOGIES CO., LTD 2SD1616/A NPN SILICON TRANSISTOR w w w . u n i s o n i c . c o m . t w 1 of 4 Copyright © 2005 Unisonic Technologies Co., Ltd QW-R201-008,C NPN EPITAXIAL SILICON TRANSISTOR „ DESCRIPTION * Audio frequency power amplifier * Medium speed switching TO-92 SOT-89 SIP-3 TO-92SP *Pb-free plating product number: 2SD1616L/2SD1616AL „ ORDERING INFORMATION Order Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing 2SD1616-x-AB3-R 2SD1616L-x-AB3-R SOT-89 B C E Tape Reel 2SD1616-x-G03-K 2SD1616L-x-G 03-K SIP-3 E C B Bulk 2SD1616-x-T92-B 2SD1616L-x-T92-B TO-92 E C B Tape Box 2SD1616-x-T92-K 2SD1616L-x-T92-K TO-92 E C B Bulk 2SD1616-x-T9S-K 2SD1616L-x-T9S-K TO-92SP E C B Bulk 2SD1616A-x-AB3-R 2SD1616AL-x-AB3-R SOT-89 B C E Tape Reel 2SD1616A-x-G03-K 2SD1616AL-x-G03-K SIP-3 E C B Bulk 2SD1616A-x-T92-B 2SD1616AL-x-T92-B TO-92 E C B Tape Box 2SD1616A-x-T92-K 2SD1616AL-x-T92-K TO-92 E C B Bulk 2SD1616A-x-T9S-K 2SD1616AL-x-T9S-K TO-92SP E C B Bulk 2SD1616L-x-AB3-T (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) B: Tape Box, K: Bulk, R: Tape Reel , T: Tube (2) AB3: SOT-89, G03: SIP-3, T92: TO-92, T 9S: TO-92S (3) x: refer to Classification of hFE1 (4) L: Lead Free Plating , Blank: Pb/Sn

2SD1616/A NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 4 www.unisonic.com.tw QW-R201-008,C „ ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL RATINGS UNIT 2SD1616 60 Collector to Base Voltage 2SD1616A VCBO 120 V 2SD1616 50 Collector to Emitter Voltage 2SD1616A VCEO 60 V Emitter to Base Voltage V EBO 6 V DC I C 1 A Collector Current Pulse(Note2) I CM 2 A Total Power Dissipation P C 750 mW Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width ≤10ms, Duty cycle<50% „ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Emitter Saturation Voltage V CE (SAT) IC=1A, IB=50mA 0.15 0.3 V Base-Emitter Saturation Voltage V BE (SAT) IC=1A, IB=50mA 0.9 1.2 V Base Emitter On Voltage V BE (ON) V CE =2V, IC =50mA 600 640 700 mV Collector Cut-Off Current I CBO V CB=60V 100 nA Emitter Cut-Off Current I EBO V EB= 6V 100 nA 2SD1616 135 600 hFE1 V CE =2V, IC =100mA 2SD1616A 135 400 DC Current Gain hFE2 V CE =2V, IC=1A 81 Transition Frequency f T V CE =2V, IC =100mA 100 160 MHz Output Capacitance C ob V CB =10V, f =1MHz 19 pF Turn On Time t ON V CE =10V, IC =100mA 0.07 DŽs Storage Time t STG I B1 = -IB2 =10mA 0.95 DŽs Fall Time t F V BE(OFF) = -2 ~ -3V 0.07 DŽs „ CLASSIFICATION OF hFE1 RANK Y G L hFE1 135 ~ 270 200 ~ 400 300 ~ 600

2SD1616/A NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 4 www.unisonic.com.tw QW-R201-008,C „ TYPICAL CHARACTERISTICS Collector Output Capacitance Collector -Base Voltage, VCB (V) Capacitance, Cob (pF) 1000 500 300 100 1 3 5 10 30 50 100 300 IE=0 f=1.0MHz Current Gain-Bandwidth Product Collector Current, IC (A) Current Gain-Bandwidth Product, fT (MHz) 1000 500 300 100 105310.30.10.030.01 VCE=2V Static Characteristic Collector-Emitter Voltage , VCE (V) 100 IB=50DŽA 46 8 1 0 Collector Current , IC (mA) IB=100DŽA IB=150DŽA IB=200DŽA IB=250DŽA IB=300DŽA Static Characteristic Collector -Emitter Voltage , VCE (V) 0.20 0.6 0.8 IB=0.5mA 0.4 0.2 Collector Current, IC (A) IB=1.0mA IB=1.5mA IB=2.0mA IB=2.5mA IB=3.0mA IB=3.5mA IB=4.5mA IB=5.0mA IB=4.0mA 0.4 0.6 0.8 Switching Time Collector Current , IC (A) 0.3 0.1 0.01 VCC=10V IC=10×IB1= -10×IB2 0.050.030.001 0.03 0.05 0.5 Time, tON, tSTG, tF (DŽs) tON tF tSTG

2SD1616/A NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 4 of 4 www.unisonic.com.tw QW-R201-008,C „ TYPICAL CHARACTERISTICS(Cont.) DC Current Gain Collector Current , IC (A) 0.01 300 1000 DC Current Gain, hFE 500 100 VCE=2V Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector Current , IC (A) 0.01 0.1 IC=20IB Saturation Voltage, VCE (SA T), VBE (SAT), (V) 0.03 0.05 0.3 0.5 VCE (SAT) VBE (SAT) Safe Operating Area Collector-Emitter Voltage, VCE (V) 0.5 0.1 300 0.3 0.05 51 0 3 0 0.03 0.01 1005031 Collector Current, IC (A) 10ms200ms DC 2SD1616A 2SD1616 Power Derating Ambient Temperature , Ta (¥) 0.8 0.2 200 0.4 1750 0.6 150125100755025 Power Dissipation, PD (W) pw=1ms UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.