2SD1616 WEITRON

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Technical content

Characteristics Symbol Min Max Unit

ELECTRICAL CHARACTERISTICS

Collector-Emitter Breakdown Voltage (IC= 2.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 10 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 10 uAdc, IC=0) Collector Cutoff Current (VCB=60 Vdc, IE=0) Emitter Cutoff Current (VEB= 6.0 V c, I =0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 6.0 0.1 Vdc Vdc Vdc uAdc uAdc 2SD1616 2SD1616A Tstg PD C C WEITRON http://www.weitron.com.tw NPN Transistors (Ta=25 C) 120 6.0 1.0 Total Device Dissipation T =25 C 0.75 W Junction Temperature T j 150 Storage, Temperature -55 to +150 120 0.1 d C A TO-92 1 2 3 1. EMITTER 3. BASE 2. COLLECTOR 2SD1616 2SD1616A 2SD1616 2SD1616A

Current-Gain-Bandwidth Product (IC= 100 mAdc, VCE=2.0 Vdc, f=30MHz) fT Cob MHz Collector-Emitter Saturation Voltage (IC= 1.0 mAdc, IB= 50 mAdc) Base-Emitter Saturation Voltage (IC= 1.0 mAdc, IB= 50 mAdc) hFE hFE VCE(sat) VBE(sat) Vdc Vdc Vdc ON CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol UnitMin Max 0.9 0.15 100 2SD16162SD1616A WEITRON http://www.weitron.com.tw (IC=100 mAdc, VCE=2.0 Vdc) (IC=1.0 mAdc, VCE= 2.0 Vdc) DC Current Gain DC Current Gain 135 600(1) (2) 81 0.3 1.2 0.64 0.7 25 PF 160 - - Classification of hFE(1) Rank L K U Range 135-270 200-400 300-600 SWITCHING CHARACTERISTICS TYP Base-Emitter on Voltage (I =50mA, V =2.0V)C CE V (on)BE Output Capacitance (V =10V, I =0V, f= 1MHZ)CB E (1) (1) (1) Turn-On Time Vcc =10V, Ic =100 mA V =2-3V I =-I =10 mAStorage Time Fall Time B1 B2 BE(OFF) ton 0.07 0.95 0.07 ts t f Note: 1. Pulse Test: Pulse Width 350 us, Duty Cycle 2%. us

http://www.weitron.com.tw 2SD16162SD1616A Typcial Characteristics

http://www.weitron.com.tw

http://www.weitron.com.tw 2SD1616 2SD1616A Dim A B C D E G H J K L Min 3.30 1.10 0.38 0.36 4.40 3.43 4.30 Max TO-92 TO-92 Outline Dimensions unit:mm 3.70 1.40 0.55 0.51 4.70 4.70 2.64 14.50 1.270TYP E C H A B D L J K G 2.44 14.10