2SD1616A MICRO-ELECTRONICS

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2SD1616A is NPN silicon planar transistor designed for use in driver and output stages of AF amplifier, general purpose application. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage V CEO 60V Collector-Base Voltage VCBO 120V Emitter-Base Voltage VEBO 6V Collector Current Continuous IC 1A Total Power Dissipation @ Ta=25oCP tot 0.65W Operating & Storage Junction Temperature Tj,Tstg -55 to +150oC ELECTRICAL CHARACTERISTICS (Ta=25oC) PARAMETER SYMBOL MIN MAX UNIT CONDITIONS Collector Cutoff Current I CBO 100 nA V CB=60V I E=0 Emitter Cutoff Current I EBO 100 nA V EB=6V I C=0 D.C. Current Gain H FE * 170 350 V CE=2V I C=100mA D.C. Current Gain H FE * 45 V CE=2V I C=1A Base-Emitter Voltage V BE * 600 700 mV V CE=2V I C=50mA Collector-Emitter Saturation Voltage V CE(sat) * 0.5 V I C=1A I B=50mA Base-Emitter Saturation Voltage V BE(sat) * 1.2 V I C=1A I B=50mA Output Capacitance Cob 19 TYP. pF VCB=10V I E=0 Gain Bandwidth Product fT 100 MHz VCE=2V I C=100mA Turn-On Time t on 0.07 TYP. µs Vcc=10V IC=100mA Storage Time tstg 0.95 TYP. µs IB1=-IB2=10mA Fall Time tf 0.07 TYP. µs VBE(off)=-2 to 3V * Pulse test PW ≦ 350µs, duty cycle ≦ 2%. MICRO ELECTRONICS 12.7 (0.5) min. 4.6 (0.18) 10 2.54 (0.1)0.51 (0.02) Bottom view 0.45 (0.018) Unit: mm(inch) TO-92B 0.4 (0.016) 4.68 (0.18) 3.58 (0.14) EBC G/F, 38 Hung To Road, Kwun Tong, Kowl oon, Hong Kong. Kwun Tong P.O. BOX 69477, Hong Kong. TEL: (852) 23430181 FAX: ( 852) 23410321 MICRO ELECTRONICS LTD.