2SD1615A_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

www.kexin.com.cn 1 Transistors ■ Features

  • Low VCE(sat)
  • Complementary to 2SB1115A 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 60 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 1 Collector Current - Pulse (Note.1) ICP 2 Collector Power Dissipation PC 2 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A Note.1:PW ≤ 10 ms, Duty cycle ≤ 20%. ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 120 Collector- emitter breakdown voltage VCEO Ic= 1 mA，IB= 0 60 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 6 Collector-base cut-off current ICBO VCB= 120 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 6V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=1 A, IB=50 mA 0.15 0.3 Base - emitter saturation voltage VBE(sat) IC=1 A, IB=50 mA 0.9 1.2 Base - emitter voltage VBE VCE= 2V, IC= 50 mA 0.6 0.7 VCE= 2V, IC= 100 mA 135 400 VCE= 2V, IC= 1 A 81 270 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 19 pF Transition frequency fT VCE= 2V, IE= -100mA 80 160 MHz V uA DC current gain hFE V ■ Classification of hfe(1) NPN Transistors 2SD1615A Type 2SD1615A-Q 2SD1615A-P Range 135-270 200-400 Marking GQ GP

www.kexin.com.cn2 Transistors ■ Typical Characterisitics When m oun ted on cer amic subst rate o f 16 cm × 0.7 m m without heatsink TA – Ambient Temperature – ˚C 0 40 80 120 160 200 2.5 2.0 1.5 1.0

0.5 PT – Total Power Dissipation – W

TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 100 0 2 4 6 8 10 300 Aµ 200 Aµ 200 Aµ 150 Aµ 100 Aµ IB = 50 Aµ COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE – Collector to Emitter Voltage – V IC – Collector Current – mA 1000 500 200 100 IC – Collector Current – A DC CURRENT GAIN vs. COLLECTOR CURRENT hEF – DC Current Gain VCE = 2.0 V 1.0 0.8 0.6 0.4 0.2 3.0 mA 2.5 mA 2.0 mA 1.5 mA 1.0 mA IB = 0.5 mA COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE VCE(sat) – Collector Saturation Voltage – V IC – Collector Current – A 0.5 0.2 0.1 0.05 0.02 IC – Collector Current – A COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT VCE(sat) – Collector Saturation Voltage – V VBE(sat) – Base Saturation Voltage – V 3.5 mA 4.0 m A5.0 mA 4.5 mA IC = 20·IB VCE(sat) VBE(sat) SAFE OPERATING AREA (TRANSIENT THERMAL RESISTANCE METHOD) 1 pulse 0.5 0.2 0.1 0.05 0.02 0.01 1 2 5 10 20 50 100 VCE – Collector to Emitter Voltage – V IC – Collector Current – A 2SD1615A PW=1 ms 10 m s 200 ms NPN Transistors 2SD1615A

www.kexin.com.cn 3 Transistors ■ Typical Characterisitics 100 200 500 1000 GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT fT – Gain Bandwidth Product – MHZ IC – Collector Current – A VEC = 2.0 V 1 2 5 10 20 50 100 100 OUTPUT CAPCITANCE vs. COLLECTOR TO BASE VOLTAGE Cob – Output Capacitance – pF VCB – Collector to Base Voltage – V IE = 0 f = 1.0 MHZ IC – Collector Current – A 0.05 0.1 0.2 0.5 SWITCHING TIME vs. COLLECTOR CURRENT t – Switching Time – sµ VCC = 10 V IC = 10.IBI = –10.IB2 VBE(off) = –2 to 3 V PW = 2 s Duty Cycle ≤ 2 % µ tf ton tstg NPN Transistors 2SD1615A