2SD1614_15 KEXIN

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www.kexin.com.cn 1 Tran sistors NPN Transistors 2SD1614 ■ Features

High DC Current Gain:hFE 135 to 600.
Low VCE(sat)
Complementary to 2SB1114 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 2 Collector Current - Pulse (Note.1) ICP 3 Collector Power Dissipation PC 2 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A Note.1:PW ≤ 10 ms, Duty cycle ≤ 20%. ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 40 Collector- emitter breakdown voltage VCEO Ic= 1 mA，IB= 0 20 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 6 Collector-base cut-off current ICBO VCB= 40 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 6V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=2 A, IB=50 mA 0.3 0.5 Base - emitter saturation voltage VBE(sat) IC=2 A, IB=50 mA 0.95 1.2 Base - emitter voltage VBE VCE= 6V, IC= 100 mA 0.65 0.68 0.75 VCE= 2V, IC= 100 mA 135 350 600 VCE= 2V, IC= 2 A 40 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 28 pF Transition frequency fT VCE= 10V, IE= -50mA 200 MHz V uA DC current gain hFE V ■ Classification of hfe(1) Type 2SD1614-M 2SD1614-L 2SD1614-K Range 135-270 200-400 300-600 Marking XM XL XK

www.kexin.com.cn2 Transistors NPN Transistors 2SD1614 ■ Typical Characterisitics

www.kexin.com.cn 3 Tran sistors NPN Transistors 2SD1614 ■ Typical Characterisitics