2SD1538 PANASONIC

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2SD1538, 2SD1538A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1070 and 2SB1070A n Features l Low collector to emitter saturation voltage VCE(sat) l High-speed switching l N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 1.3 150 –55 to +150 Unit V V V A A W 2SD1538 2SD1538A 2SD1538 2SD1538A TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO IEBO V CEO hFE1 hFE2 * V CE(sat) V BE(sat) fT ton tstg tf Conditions V CB = 40V , IE = 0 V CB = 50V , IE = 0 V EB = 5V , IC = 0 IC = 10mA, IB = 0 V CE = 2V , IC = 0.1A V CE = 2V , IC = 1A IC = 2A, IB = 0.1A IC = 2A, IB = 0.1A V CE = 5V , IC = 0.5A, f = 10MHz IC = 2A, IB1 = 0.2A, IB2 = – 0.2A, V CC = 20V min typ 120 0.2 0.5 0.1 max 260 0.5 1.5 Unit mA mA V V V MHz ms ms ms 2SD1538 2SD1538A 2SD1538 2SD1538A *hFE2 Rank classification Rank Q P hFE2 90 to 180 130 to 260 Unit: mm 1:Base 2:Collector 3:Emitter N Type Package 8.5–0.2 6.0–0.5 10.0–0.310.5min. 2.0 1.5–0.1 1.5max. 0.8–0.1 5.08–0.5 2.54–0.3 1.1max. 0.5max. 1.0–0.1 3.4–0.3 213 Unit: mm 8.5–0.2 4.4–0.5 2.0 10.0–0.3 14.7–0.5 4.4–0.5 6.0–0.3 3.4–0.3 2.54–0.3 5.08–0.5 1.0–0.1 0.8–0.1 1.5 –0.4 3.0 +0.4 –0.2 0 to 0.4 1.1 max. R0.5 R0.5 123 1:Base 2:Collector 3:Emitter N Type Package (DS)

Power Transistors 2SD1538, 2SD1538A PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I C ton, tstg, tf — IC Area of safe operation (ASO) 0 150 12510025 75 50 (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) With a 50 · 50 · 2mm Al heat sink (4) Without heat sink (PC =1.3W)(1) (2) (3) (4) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 IB=60mA 50mA 40mA 30mA 20mA 10mA 5mA TC =25˚C Collector to emitter voltage VCE (V) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 100 IC /IB=10 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 100 IC /IB=10 TC =–25˚C 25˚C 100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.1 1 10 1000.3 3 30 100 300 1000 3000 10000 VCE =2V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 100 300 1000 3000 10000 VCE =5V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 08 26 4715 3 0.01 0.1 0.03 0.3 Pulsed tw =1ms Duty cycle=1% I C /IB=10 (IB1=–IB2) VCC =20V TC =25˚C tstg tf ton Collector current IC (A) Switching time ton,tstg,tf (ms) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚C ICP IC 10ms300ms t=1ms2SD1538 2SD1538A Collector to emitter voltage VCE (V) Collector current IC (A)

Power Transistors 2SD1538, 2SD1538A R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 10–2 10–1 102 (1) Without heat sink (2) With a 50 · 50 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)