2SD1511 PANASONIC

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Technical content

Silicon NPN epitaxial planer type darlington For low-frequency output amplification n Features l Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer: hFE = 4000 to 2000. l A shunt resistor is omitted from the driver. l Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Collector EIAJ:SC–62 3:Emitter Mini Power Type Package 4.5–0.1 2.6–0.1 2.5–0.1 0.4max.1.0 +0.1 –0.2 4.0 +0.25 –0.20 3.0–0.15 1.5–0.1 0.4–0.08 0.5–0.08 1.5–0.1 0.4–0.04 1.6–0.2 45° marking 321 Symbol V CBO V CEO V EBO ICP IC PC * Tj Tstg Ratings 100 1.5 150 –55 ~ +150 Unit V V V A A W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Symbol I CBO IEBO V CBO V CEO V EBO hFE *1 V CE(sat) V BE(sat) fT Conditions V CB = 25V , IE = 0 V EB = 4V , IC = 0 IC = 100mA, IE = 0 IC = 1mA, IB = 0 IE = 100mA, IC = 0 V CE = 10V , IC = 1A*2 IC = 1.0A, IB = 1.0mA*2 IC = 1.0A, IB = 1.0mA*2 V CB = 10V , IE = –50mA, f = 200MHz min 100 4000 typ 150 max 100 100 40000 1.8 2.2 Unit nA nA V V V V V MHz *2 Pulse measurement * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion Marking symbol :P Internal Connection B C E *1hFE Rank classification Rank Q R S hFE 4000 ~ 10000 8000 ~ 20000 16000 ~ 40000 Marking Symbol PQ PR PS

PC — Ta I C — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC C ob — V CB 01 0 826 4 2.4 2.0 1.6 1.2 0.8 0.4 Ta=25˚C IB=200mA 40mA 60mA 80mA 180mA 160mA 140mA 120mA 100mA Collector to emitter voltage VCE (V) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3

100 IC /IB=1000

25˚C 75˚C Ta=–25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 Ta=–25˚C 25˚C 75˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 102 103 104 105 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0 200 16040 120 80 1.2 1.0 0.8 0.6 0.4 0.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W )