Download PDF2SD1478 PANASONIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
2SD1478, 2SD1478A Silicon NPN epitaxial planer type darlington For low-frequency amplification n Features l Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer: hFE = 4000 to 20000. l A shunt resistor is omitted from the driver. n Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 750 500 200 150 –55 ~ +150 Unit V V V mA mA mW 2SD1478 2SD1478A 2SD1478 2SD1478A n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Symbol I CBO IEBO V CBO V CEO V EBO hFE *1 V CE(sat) V BE(sat) fT Conditions V CB = 25V , IE = 0 V EB = 4V , IC = 0 IC = 100mA, IE = 0 IC = 1mA, IB = 0 IC = 1mA, IB = 0 IE = 100mA, IC = 0 V CE = 10V , IC = 500mA*2 IC = 500mA, IB = 0.5mA*2 IC = 500mA, IB = 0.5mA*2 V CB = 10V , IE = –50mA, f = 200MHz min 4000 typ 200 max 100 100 20000 2.5 3.0 Unit nA nA V V V V V MHz *2 Pulse measurement 2SD1478 2SD1478A 2SD1478 2SD1478A Unit: mm 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package 2.8 +0.2 –0.3 1.5 +0.25 –0.05 0.950.95 1.9–0.2 0.4 +0.1 –0.05 1.1 +0.2 –0.10.8 0.4–0.2 0 to 0.1 0.16 +0.1 –0.06 1.45 0.1 to 0.3 2.9 +0.2 –0.05 Marking symbol :2N (2SD1478) 2O (2SD1478A) Internal Connection B C E *1hFE1 Rank classification Rank Q R hFE1 4000 ~ 10000 8000 ~ 20000 2SD1478 2NQ 2NR 2SD1478A 2OQ 2OR Marking Symbol
Transistor 2SD1478, 2SD1478A PC — Ta I C — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC C ob — V CB 0 200 16040 120 80 240 200 160 120 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 0.1 1 10 1000.3 3 30 0.1 0.3 100 300
1000 Ta=25˚C
IB=50mA 45mA 40mA 35mA 5mA 10mA 15mA 20mA 25mA 30mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3
100 IC /IB=1000
25˚C –25˚C Ta=75˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 Ta=–25˚C 25˚C 75˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 102 103 104 105 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF)