Download PDF2SD1423 PANASONIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A n Features l Optimum for high-density mounting. l Allowing supply with the radial taping. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector EIAJ:SC–72 3:Base New S Type Package 4.0–0.2 marking 2.54–0.15 1.271.27 3.0–0.215.6–0.5 2.0–0.2 0.7–0.1 0.45–0.1 123 +0.2 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 0.5 300 150 –55 ~ +150 Unit V V V A A mW 2SD1423 2SD1423A 2SD1423 2SD1423A n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO ICEO V CBO V CEO V EBO hFE1 *1 hFE2 V CE(sat) fT C ob Conditions V CB = 20V , IE = 0 V CE = 20V , IB = 0 IC = 10mA, IE = 0 IC = 2mA, IB = 0 IE = 10mA, IC = 0 V CE = 10V , IC = 150mA*2 V CE = 10V , IC = 500mA*2 IC = 300mA, IB = 30mA*2 V CB = 10V , IE = –50mA, f = 200MHz V CB = 10V , IE = 0, f = 1MHz min typ 200 max 0.1 340 0.6 Unit mA mA V V V V MHz pF *1hFE1 Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 *2 Pulse measurement 2SD1423 2SD1423A 2SD1423 2SD1423A
Transistor 2SD1423, 2SD1423A PC — Ta I C — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB 0 160 40 120 80 14020 100 60 500 400 300 200 100 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 2 10826 4 1200 1000 800 600 400 200 Ta=25˚C IB=10mA 7mA 6mA 9mA 8mA 5mA 4mA 3mA 2mA 1mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3
100 IC /IB=10
25˚C –25˚C Ta=75˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 Ta=–25˚C 25˚C 75˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 300 250 200 150 100 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 160 120 100 140 VCB =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF)