2SD1418-HF_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

www.kexin.com.cn 1 Transistors ■ Features

  • Low frequency power amplifier
  • Complementary to 2SB1025-HF 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 80 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1 Collector Current - Pulse (Note.1) ICP 2 Collector Power Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A Note.1:PW ≤ 10 ms, Duty cycle ≤ 20%. ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 120 Collector- emitter breakdown voltage VCEO Ic= 1 mA，RBE= ∞ 80 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 5 Collector-base cut-off current ICBO VCB= 100 V , IE= 0 10 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB=50 mA 1 Base - emitter saturation voltage VBE(sat) IC=500 mA, IB=50 mA 1.2 Base - emitter voltage VBE VCE= 5V, IC= 150 mA 1.5 VCE= 5V, IC= 150 mA 60 320 VCE= 5V, IC= 500 mA 30 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 12 pF Transition frequency fT VCE= 5V, IC= 150mA 140 MHz V uA DC current gain hFE V ■ Classification of hfe(1) Type 2SD1418-A-HF 2SD1418-B-HF 2SD1418-C-HF Range 60-120 100-200 160-320 Marking DA F DB F DC F
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish NPN Transistors 2SD1418-HF

www.kexin.com.cn2 Transistors ■ Typical Characterisitics 15010050 Ambient Temperature Ta (bC) 1.2 0.8 0.4 Maximum Collector Dissipation Curve Collector Power Dissipation PC (W) (on the alumina ceramic board) 84 1062 Collector to Emitter Voltage VCE (V) 1.0 0.8 0.6 0.4 0.2 Typical Output Characteristics Collector Current IC (A) IB = 0 0.5 mA Base to Emitter Voltage VBE (V) 500 200 100 Typical Transfer Characteristics Collector Current IC (mA) VCE = 5 V Ta = 75 C 25–25 10 100 1,00030 30031 Collector Current IC (mA) 300 250 200 150 100 DC Current Transfer Ratio hFE DC Current Transfer Ratio vs. Collector Current VCE = 5 V Ta = 75 C –25 b b 10 30 100 300 1,000 Collector Current IC (mA) 240 200 160 120 Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product fT (MHz) VCE = 5 V Pulse 052 105 20 1001 Collector to Base Voltage VCB (V) 200 100 Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage f = 1 MHz IE = 0 NPN Transistors 2SD1418-HF

www.kexin.com.cn 3 Transistors ■ Typical Characterisitics 10 100 1,00030 30031 Collector Current IC (mA) 1.2 1.0 0.8 0.6 0.4 0.2 0.6 0.5 0.4 0.3 0.2 0.1 Base to Emitter Saturation Voltage VBE(sat) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Saturation Voltage vs. Collector Current IC = 10 IB Pulse VCE(sat) VBE(sat) NPN Transistors 2SD1418-HF