2SD1401 SANYO
Document overview
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Technical content
No. 1268 2SD1401 ~ NPN Triple Diffused Planar Type Silicon Transistor @ ra For CIV H De 0 SANYO ‘OR ORIZONTAL VEFLECTION UUTPUT Features: + High breakdown voltage and high reliability + High switching speed + Capable of being mounted easily due to one-point fixing type plastic mold package Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage VcBo 1500 v Collector to Emitter Voltage VcEO 800 v Emitter to Base Voltage VEBO 7 v Collector Current Ic 3.5 A Peak Collector Current icp 10 A Collector Dissipation Pc Te=25°C 80 wW Junction Temperature 5 150 °c Storage Temperature Tstg -55 to +150 °c Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Icpo Vcp=800V, IE=0 10. uA Emitter Cutoff Current IEBO VEB=5V, Ic=0 1 oma DC Current Gain nRE Vor=5V,I¢=0.5A 8 Gain Bandwidth Product fr vcE=10V,Ic=0.5A 3 MHz C-E Saturation Voltage Vcr(sat) Ic=2-5A,Ip=0.8A 8 v B-E Saturation Voltage VBE(sat) Ic=2-5A,Ip=0.8A 1.5 v C-B Breakdown Voltage V(BR)CBO Ic=5mA,Ip=0 1500 v C-E Breakdown Voltage V(BR) CEO Ic=L00mA, RpE= 800 Vv E-B Breakdown Voltage V(BR)EBO Ip=200mA, T¢=0 7 v Fall Time te I9=3A,1p1=0.8A,Ip2=-1.6A 0.7 us Switching Time Test Circuit Case Outline 2022 (unit:mm) PW=20us ,DutyS1% ourpur " mo — L 1.0 INPUT RB ©) . 83 | 12 p< ¢ \\ $67 Ks ae 50; 15.0—oh 2.0 —+| Halt H HH E: Emitter 100u 4700 © ¢: Collector VeE=-S¥ Yec=200V gd bt B: Base These specifications are subject to change without notice TOKYO SANYO ELECTRIC CO.. LTD. SEMICONDUCTOR DIVISION 15-13. 6-CHOME. SOTOKANDA. CHIYODA-KU. TOKYO IO! JAPAN 5033KI ,MT No.1268-1/3