2SD1385 PANASONIC

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Technical content

Silicon NPN triple diffusion planer type For low-frequency output amplification n Features l High collector to base voltage VCBO . l High collector to emitter voltage VCEO . l Large collector power dissipation PC . l Low collector to emitter saturation voltage VCE(sat). l M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Collector EIAJ:SC–71 3:Emitter M Type Mold Package 6.9–0.1 1.0–0.1 1.0 2.5–0.1 1.0 1.5 1.5 R0.9 R0.9 R0.7 0.4 0.85 4.1–0.2 4.5 –0.1 2.5 2.5 123 Symbol V CBO V CEO V EBO ICP IC PC * Tj Tstg Ratings 400 400 200 100 150 –55 ~ +150 Unit V V V mA mA W n Electrical Characteristics (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol V CBO V CEO V EBO hFE V CE(sat) V BE(sat) fT C ob Conditions IC = 100mA, IE = 0 IC = 500mA, IB = 0 IE = 100mA, IC = 0 V CE = 5V , IC = 30mA IC = 50mA, IB = 5mA IC = 50mA, IB = 5mA V CB = 30V , IE = –20mA, f = 200MHz V CB = 30V , IE = 0, f = 1MHz min 400 400 typ max 1.5 1.5 Unit V V V V V MHz pF * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion

PC — Ta I C — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB 01 2 10826 4 120 100 Ta=25˚C 0.9mA 0.7mA 0.5mA 0.3mA 0.1mA 0.8mA 0.6mA 0.4mA 0.2mA IB=1.0mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 IC /IB=10

25˚C –25˚C Ta=75˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3 Ta=–25˚C 25˚C 75˚C Collector current IC (mA ) Base to emitter saturation voltage VBE(sat) (V) 0.1 1 10 10030. 3 20 VCE =5V Ta=75˚C25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE Emitter current IE (mA ) Transition frequency fT (MHz ) VCB =30V Ta=25˚C 10 30 100 300 1000 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0 200 16040 120 80 1.2 1.0 0.8 0.6 0.4 0.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W )