2SD1367_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

www.kexin.com.cn 1 Transistors NPN Transistors 2SD1367 ■ Features

  • Low frequency power amplifier
  • Complementary to 2SB1001 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 16 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 2 Collector Current - Pulse (Note.1) ICP 3 Collector Power Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A Note.1:PW ≤ 10 ms, Duty cycle ≤ 20%. ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 20 Collector- emitter breakdown voltage VCEO Ic= 1 mA，RBE= ∞ 16 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 6 Collector-base cut-off current ICBO VCB= 16 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=1 A, IB=100mA 0.15 0.3 Base - emitter saturation voltage VBE(sat) IC=1 A, IB=100mA 0.9 1.2 DC current gain hFE VCE= 2V, IC= 0.1 A 100 500 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 20 pF Transition frequency fT VCE= 2V, IC= 10 mA 100 MHz V V uA ■ Classification of hfe Type 2SD1367-A 2SD1367-B 2SD1367-C Range 100-200 160-320 250-500 Marking BA BB BC

www.kexin.com.cn2 Transistors NPN Transistors 2SD1367 ■ Typical Characterisitics 0 50 100 150 Ambient Temperature Ta (bC) Maximum Collector Dissipation Curve 1.2 0.8 0.4 Collector Power Dissipation PC (W) (on the alumina ceramic board) Typical Output Characteristics 100 0 2 4 6 8 10 Collector Current IC (mA) Collector to Emitter Voltage VCE (V) IB = 0 0.05 mA 0.1 0.2 0.2 0.15 0.25 Typical Output Characteristics 2.0 1.6 0.4 1.2 0.8 Collector Current IC (A) Collector to Emitter Voltage VCE (V) IB = 0 5 mA Typical Transfer Characteristics Collector Current IC (mA) Base to Emitter Voltage VBE (V) 100 300 1,000 VCE = 2 V Ta = 75 C –25 b DC Current Transfer Ratio vs. Collector Current Collector Current IC (mA) 1 3 10 30 100 300 1,000 100 300 1,000 30,00 10,000DC Current Transfer Ratio hFE Pusle VCE = 2 V Ta = 75bC 25 –25 Saturation Voltage vs. Collector Current 0.003 0.01 0.03 0.1 0.3 1.0 3.0 Collector Current I C (mA) 3 10 30 100 300 1,000 3,000 Collector to Emitter Saturation Voltage VCE (sat) (V) Base to Emitter Saturation Voltage VBE (sat) (V) VBE (sat) VCE (sat) lC = 10 lB

www.kexin.com.cn 3 Tran sistors NPN Transistors 2SD1367 ■ Typical Characterisitics Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) Collector to Base Voltage VCB (V) 0.1 0.3 1.0 3 10 100 300 1,000 f = 1 MHz IE = 0