2SD1366_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Transistors NPN Transistors 2SD1366 ■ Features
- Low frequency power amplifier
- Complementary to 2SB1000 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1 Collector Current - Pulse (Note.1) ICP 1.5 Collector Power Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A Note.1:PW ≤ 10 ms, Duty cycle ≤ 20%. ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 25 Collector- emitter breakdown voltage VCEO Ic= 1 mA， RBE=∞ 20 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 5 Collector-base cut-off current ICBO VCB= 20 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 4V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=800 mA, IB=80mA 0.15 0.3 Base - emitter saturation voltage VBE(sat) IC=800 mA, IB=80mA 0.9 1 DC current gain hFE VCE= 2V, IC= 0.5 A 85 240 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 22 pF Transition frequency fT VCE= 2V, IC= 500mA 240 MHz V V uA ■ Classification of hfe Type 2SD1366-A 2SD1366-B Range 85-170 120-240 Marking AA AB
www.kexin.com.cn2 Transistors NPN Transistors 2SD1366 ■ Typical Characterisitics 0.4 0.8 1.2 Ambient Temperature Ta (bC) Maximum Collector Dissipation Curve 100 150 Collector Power Dissipation PC (W) (on the alumina ceramic board) 200 800 600 400 1,000 0.4 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) Typical Output Characteristics 0.8 1.2 1.4 1.6 1 mA IB = 0 300 100 1,000 0.20 Base to Emitter Voltage VBE (V) Collector Current IC (mA) Typical Transfer Characteristics 0.4 0.6 0.8 1.0 VCE = 2 V Ta = 75 C 25 C 1,000 200 500 100 5,000 2,000 Collector Current IC (mA) DC Current Transfer Ratio hFE DC Current Transfer Ratio vs. Collector Current 10 30 100 300 1,000 VCE = 2 V Ta = 75 C 25 C bb b b 0.05 0.15 0.10 0.25 0.20 Collector Current IC (mA) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current 10 30 100 300 1,000 IC = 10 IB Ta = 75 C 25 200 100 300 3010 Collector Current IC (mA) Gain Bandwidth Product fT (MHz) Gain Bandwidth Product vs. Collector Current 100 300 1,000 VCE = 2 V b
www.kexin.com.cn 3 Tran sistors NPN Transistors 2SD1366 ■ Typical Characterisitics 100 200 Collector to Base Voltage VCB (V) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 5 10 20 50 f = 1 MHz IE =0