2SD1350 PANASONIC

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Technical content

2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching n Features l High collector to base voltage VCBO . l High collector to emitter voltage VCEO . l Large collector power dissipation PC . l Low collector to emitter saturation voltage VCE(sat). l M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Collector EIAJ:SC–71 3:Emitter M Type Mold Package 6.9–0.1 1.0–0.1 1.0 2.5–0.1 1.0 1.5 1.5 R0.9 R0.9 R0.7 0.4 0.85 4.1–0.2 4.5 –0.1 2.5 2.5 123 Symbol V CBO V CEO V EBO ICP IC PC * Tj Tstg Ratings 400 600 400 500 500 150 –55 ~ +150 Unit V V V A mA W 2SD1350 2SD1350A 2SD1350 2SD1350A n Electrical Characteristics (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Fall time Storage time Symbol V CBO V CEO V EBO hFE V CE(sat) V BE(sat) fT C ob ton tf tstg Conditions IC = 100mA, IE = 0 IC = 500mA, IB = 0 IE = 100mA, IC = 0 V CE = 5V , IC = 30mA IC = 250mA, IB = 50mA* IC = 250mA, IB = 50mA* V CB = 30V , IE = –20mA, f = 200MHz V CB = 30V , IE = 0, f = 1MHz V CC = 200V , IC = 100mA IB1 = 10mA, IB2 = –10mA V CC = 200V , IC = 100mA IB1 = 10mA, IB2 = –10mA V CC = 200V , IC = 100mA IB1 = 10mA, IB2 = –10mA min 400 600 400 500 typ 0.4 1.0 0.7 1.0 3.6 4.0 max 1.5 1.5 Unit V V V V V MHz pF ms ms ms * Pulse measurement * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion 2SD1350 2SD1350A 2SD1350 2SD1350A 2SD1350 2SD1350A 2SD1350 2SD1350A 2SD1350 2SD1350A

Transistor 2SD1350, 2SD1350A PC — Ta I C — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB 0 160 40 120 80 14020 100 60 1.6 1.2 0.4 1.0 1.4 0.8 0.2 0.6 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 120 100 Ta=25˚C 0.9mA 0.7mA 0.5mA 0.3mA 0.1mA 0.8mA 0.6mA 0.4mA 0.2mA IB=1.0mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3

100 IC /IB=5

25˚C –25˚C Ta=75˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 Ta=–25˚C 25˚C 75˚C Collector current IC (mA ) Base to emitter saturation voltage VBE(sat) (V) 1 10 100 10003 30 300 120 100 VCE =5V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE VCB =30V Ta=25˚C Emitter current IE (A) Transition frequency fT (MHz ) 10 30 100 300 1000 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF)