2SD1327 PANASONIC

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Silicon NPN triple diffusion planar type Darlington For midium speed power switching n Features l Incorporating a zener diode of 60V zener voltage between col- lector and base l Minimized variation in the breakdown voltage l Large energy handling capability l High-speed switching l Full-pack package which can be installed to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 60–10 60–10 150 –55 to +150 Unit V V V A A W n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Energy handling capability Symbol I CBO IEBO V CEO hFE1 *1 hFE2 V CE(sat) V BE(sat) fT ton tstg tf Es/b*2 Conditions V CB = 50V , IE = 0 V EB = 7V , IC = 0 IC = 5mA, IB = 0 V CE = 3V , IC = 4A V CE = 3V , IC = 8A IC = 4A, IB = 8mA IC = 4A, IB = 8mA V CE = 10V , IC = 0.5A, f = 1MHz IC = 4A, IB1 = 8mA, IB2 = –8mA, V CC = 50V IC = 1A, L = 100mH, RBE = 100W min 2000 500 typ 0.5 max 100 10000 1.5 Unit mA mA V V V MHz ms ms ms mJ *1hFE1 Rank classification Rank Q P hFE1 2000 to 50004000 to 10000 TC =25°C Ta=25°C *2Es/b Test circuit Unit: mm Internal Connection 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0–0.2 5.5–0.2 7.5–0.2 16.7–0.3 0.7–0.1 14.0–0.5 Solder Dip 4.0 0.5 +0.2 –0.1 1.4–0.1 1.3–0.2 0.8–0.1 2.54–0.25 5.08–0.5 213 2.7–0.2 4.2–0.2 4.2–0.2 f3.1–0.1 B E C X L Y G 120W R BE 60Hz mercury relay

PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C IC —L coil Area of safe operation (ASO) R th(t)—t 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) With a 50 · 50 · 2mm Al heat sink (4) Without heat sink (PC =2W) (1) (2) (3) (4) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 05 413 2 IB=4.0mA TC =25˚C 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA Collector to emitter voltage VCE (V) Collector current IC (A) 0.1 30 1010.3 3 0.01 0.03 0.1 0.3 IC /IB=500 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.1 30 1010.3 3 0.01 0.03 0.1 0.3 IC /IB=500 25˚C100˚C TC =–25˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.1 1 10 1000.3 3 30 100 300 1000 3000 10000 30000 100000 VCE =3V 25˚C –25˚C TC =100˚C Collector current IC (A) Forward current transfer ratio hFE 0.1 1 10 1000.3 3 30 0.1 0.3 100 300 1000 R BE =100Ω TC =25˚C 50mJ Load inductance Lcoil (mH ) Collector current IC (A) 1 10 100 10003 30 300 0.1 0.3 100 300 1000 Non repetitive pulse TC =25˚C ICP IC 10ms DC t=1ms Collector to emitter voltage VCE (V) Collector current IC (A) 10–4 1010–3 10–110–2 11 0 3102 104 10–2 10–1 103 102 (1) Without heat sink (2) With a 100 · 100 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)