2SD1280-HF

2SD1280-HF_15 KEXIN

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 3

Technical content

www.kexin.com.cn 1 Transistors ■ Features

• Satisfactory operation performances at high efficiency with the low-voltage power supply.
• Low collector to emitter saturation voltage VCE(sat)
• Complementary to 2SB956-HF 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 20 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1 Collector Current - Pulse ICP 2 Collector Power Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 20 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 20 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 20 V , IE= 0 1 Emitter cut-off current IEBO VEB= 5V , IC=0 1 Collector-emitter saturation voltage VCE(sat) IC=1 A, IB=50mA 0.5 Base - emitter saturation voltage VBE(sat) IC=500 mA, IB=50mA 1.2 hFE(1) VCE= 2V, IC= 500mA 90 150 360 hFE(2) VCE= 2V, IC= 1.5 A 50 100 Collector output capacitance Cob VCB = 6V, IE = 0, f = 1MHz 18 pF Transition frequency fT VCE= 6V, IE= -50mA,f=200MHz 150 MHz DC current gain V V uA ■ Classification of hfe(1) Type 2SD1280-Q-HF 2SD1280-R-HF 2SD1280-S-HF 2SD1280-T-HF Range 90-155 130-210 180-280 250-360 Marking RQ F RR F RS F RT F
• Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish NPN Transistors 2SD1280-HF

www.kexin.com.cn2 Transistors ■ Typical Characterisitics PC IaT — C — VCE IC — VCE(sat) IC — I B VCE(sat) — I C VBE(sat) — I C hFE — I C fT — I E Cob — VCB 0610 40 12080 14020 10060 1.2 1.0 0.8 0.6 0.4 0.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W) 1.2 1.0 0.8 0.6 0.4 0.2 Ta=25˚C IB=5.0mA 4.5mA 4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA Collector to emitter voltage VCE (V) Collector current IC (A) 1.2 1.0 0.8 0.6 0.4 0.2 Ta=25˚C IC/IB=10 20 Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (A) 210 1082 64 1.2 1.0 0.8 0.6 0.4 0.2 VCE=2V Ta=25˚C Base current IB (mA) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3

100 IC/IB=20

25˚C –25˚C Ta=75˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3

100 IC/IB=10

Ta=–25˚C 25˚C 75˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 600 500 400 300 200 100 Ta=75˚C 25˚C –25˚C VCE=2V Collector current IC (A) Forward current transfer ratio hFE 200 150 125 175 100 VCB=6V Ta=25˚C Emitter current IE (mA) Transition frequency fT (MHz) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) NPN Transistors 2SD1280-HF

www.kexin.com.cn 3 Transistors ■ Typical Characterisitics ICBO IaT — CEO — Ta Area of safe operation (ASO) 0610 40 12080 14020 10060 102 103 104 VCB=10V Ambient temperature Ta (˚C) ICBO (Ta) ICBO (Ta=25˚C) 0610 40 12080 14020 10060 102 103 105 104 VCE=18V Ambient temperature Ta (˚C) ICEO (Ta) ICEO (Ta=25˚C) 0.1 1 10 1000.3 3 30 0.001 0.003 0.01 0.03 0.1 0.3 Single pulse Ta=25˚C t=10ms t=1s DC ICP IC Collector to emitter voltage VCE (V) Collector current IC (A) NPN Transistors 2SD1280-HF