2SB956 PANASONIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1280 n Features l Large collector power dissipation PC . l Low collector to emitter saturation voltage VCE(sat). l Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Collector EIAJ:SC–62 3:Emitter Mini Power Type Package 4.5–0.1 2.6–0.1 2.5–0.1 0.4max.1.0 +0.1 –0.2 4.0 +0.25 –0.20 3.0–0.15 1.5–0.1 0.4–0.08 0.5–0.08 1.5–0.1 0.4–0.04 1.6–0.2 45° marking 321Symbol V CBO V CEO V EBO ICP IC PC * Tj Tstg Ratings –20 –20 150 –55 ~ +150 Unit V V V A A W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO V CEO V EBO hFE1 *1 hFE2 V CE(sat) V BE(sat) fT C ob Conditions V CB = –10V, IE = 0 IC = –1mA, IB = 0 IE = –10mA, IC = 0 V CE = –2V , IC = –500mA*2 V CE = –2V , IC = –1.5A*2 IC = –1A, IB = –50mA*2 IC = –500mA, IB = –50mA V CB = –6V , IE = 50mA, f = 200MHz V CB = –6V , IE = 0, f = 1MHz min –20 130 typ 200 max 280 – 0.5 –1.2 Unit mA V V V V MHz pF *1hFE1 Rank classification Rank R S hFE1 130 ~ 210 180 ~ 280 Marking Symbol HR HS * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion Marking symbol :H *2 Pulse measurement

0 160 40 120 80 14020 100 60 1.4 1.2 0.4 1.0 0.8 0.2 0.6 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W ) –1.2 –1.0 – 0.8 – 0.6 – 0.4 – 0.2 Ta=25˚C –4.5mA –4.0mA –3.5mA –3.0mA –2.5mA –2.0mA –1.5mA –1.0mA – 0.5mA IB=–5.0mA Collector to emitter voltage VCE (V) Collector current IC (A) – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 –10 IC /IB=20 Ta=75˚C25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 –10 IC /IB=10 Ta=–25˚C 25˚C 75˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 600 500 400 300 200 100 VCE =–2V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 10 30 100 300 1000 500 400 300 200 100 450 350 250 150 VCB =–6V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 120 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 Single pulse Ta=25˚C t=10ms t=1s ICP IC Collector to emitter voltage VCE (V) Collector current IC (A) PC — Ta I C — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB Area of safe operation (ASO)