2SB939 PANASONIC

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2SB939, 2SB939A Silicon PNP epitaxial planar type Darlington For midium-speed power switching Complementary to 2SD1262 and 2SD1262A n Features l High foward current transfer ratio hFE l High-speed switching l N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 –12 1.3 150 –55 to +150 Unit V V V A A W 2SB939 2SB939A 2SB939 2SB939A T C =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO IEBO V CEO hFE1 * hFE2 V CE(sat) V BE(sat) fT ton tstg tf Conditions V CB = –60V, IE = 0 V CB = –80V, IE = 0 V EB = –7V , IC = 0 IC = –30mA, IB = 0 V CE = –3V , IC = –4A V CE = –3V , IC = –8A IC = –4A, IB = –8mA IC = –4A, IB = –8mA V CE = –10V , IC = – 0.5A, f = 1MHz IC = –4A, IB1 = –8mA, IB2 = 8mA, V CC = –50V min –60 –80 2000 500 typ 0.5 max –100 –100 10000 –1.5 Unit mA mA V V V MHz ms ms ms 2SB939 2SB939A 2SB939 2SB939A *hFE1 Rank classification Rank Q P hFE1 2000 to 50004000 to 10000 Internal Connection B C E Unit: mm 1:Base 2:Collector 3:Emitter N Type Package 8.5–0.2 6.0–0.5 10.0–0.310.5min. 2.0 1.5–0.1 1.5max. 0.8–0.1 5.08–0.5 2.54–0.3 1.1max. 0.5max. 1.0–0.1 3.4–0.3 213 Unit: mm 8.5–0.2 4.4–0.5 2.0 10.0–0.3 14.7–0.5 4.4–0.5 6.0–0.3 3.4–0.3 2.54–0.3 5.08–0.5 1.0–0.1 0.8–0.1 1.5 –0.4 3.0 +0.4 –0.2 0 to 0.4 1.1 max. R0.5 R0.5 123 1:Base 2:Collector 3:Emitter N Type Package (DS)

Power Transistors 2SB939, 2SB939A PC —T a I C —V CE V CE(sat)—I C V CE(sat)—I C V BE(sat)—I C V BE(sat)—I C hFE —I C C ob —V CB Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) With a 50 · 50 · 2mm Al heat sink (3) Without heat sink (PC =1.3W) (1) (3) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) –1.8mA –1.6mA –1.4mA –1.2mA –1.0mA – 0.8mA – 0.6mA – 0.4mA – 0.2mA TC =25˚C IB=–2.0mA Collector to emitter voltage VCE (V) Collector current IC (A) – 0.1 –100 –10 – 0.3 –30 IC /IB=500 TC =100˚C –25˚C 25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) – 0.1 –100 –10 – 0.3 –30 (1) IC /IB=250 (2) IC /IB=500 (3) IC /IB=1000 TC =25˚C (1) (2) (3) Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) – 0.1 –100 –10 – 0.3 –30 IC /IB=500 TC =–25˚C 25˚C 100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) – 0.1 –100 –10 – 0.3 –30 (1) (2) (3) (1) IC /IB=250 (2) IC /IB=500 (3) IC /IB=1000 TC =25˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 102 105 104 103 VCE =–3V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 100 300 1000 3000 10000 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 Non repetitive pulse TC =25˚C 10ms t=1ms ICP IC 300ms 2SB939A 2SB939 Collector to emitter voltage VCE (V) Collector current IC (A)

Power Transistors 2SB939, 2SB939A R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 10–2 10–1 103 102 (1) (2) (1) Without heat sink (2) With a 50 · 50 · 2mm Al heat sink Time t (s) Thermal resistance Rth(t) (˚C/W)