2SD1261 PANASONIC

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2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB938 and 2SB938A n Features l High foward current transfer ratio hFE l High-speed switching l N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 1.3 150 –55 to +150 Unit V V V A A W 2SD1261 2SD1261A 2SD1261 2SD1261A TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO ICEO IEBO V CEO hFE1 hFE2 * V BE V CE(sat) fT ton tstg tf Conditions V CB = 60V , IE = 0 V CB = 80V , IE = 0 V CE = 30V , IB = 0 V CE = 40V , IB = 0 V EB = 5V , IC = 0 IC = 30mA, IB = 0 V CE = 3V , IC = 0.5A V CE = 3V , IC = 3A V CE = 3V , IC = 3A IC = 3A, IB = 12mA IC = 5A, IB = 20mA V CE = 10V , IC = 0.5A, f = 1MHz IC = 3A, IB1 = 12mA, IB2 = –12mA, V CC = 50V min 1000 1000 typ 0.5 max 200 200 500 500 10000 2.5 Unit mA mA mA V V V MHz ms ms ms 2SD1261 2SD1261A 2SD1261 2SD1261A 2SD1261 2SD1261A *hFE2 Rank classification Rank R Q P hFE2 1000 to 2500 2000 to 50004000 to 10000 Internal Connection B E C Unit: mm 1:Base 2:Collector 3:Emitter N Type Package 8.5–0.2 6.0–0.5 10.0–0.310.5min. 2.0 1.5–0.1 1.5max. 0.8–0.1 5.08–0.5 2.54–0.3 1.1max. 0.5max. 1.0–0.1 3.4–0.3 213 Unit: mm 8.5–0.2 4.4–0.5 2.0 10.0–0.3 14.7–0.5 4.4–0.5 6.0–0.3 3.4–0.3 2.54–0.3 5.08–0.5 1.0–0.1 0.8–0.1 1.5 –0.4 3.0 +0.4 –0.2 0 to 0.4 1.1 max. R0.5 R0.5 123 1:Base 2:Collector 3:Emitter N Type Package (DS)

Power Transistors 2SD1261, 2SD1261A PC —T a I C —V CE IC —V BE V CE(sat)—I C hFE —I C C ob —V CB Area of safe operation (ASO) R th(t)—t 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) With a 50 · 50 · 2mm Al heat sink (3) Without heat sink (PC =1.3W) (1) (2) (3) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 0 826 4 IB=4.0mA TC =25˚C 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA Collector to emitter voltage VCE (V) Collector current IC (A) 03 . 2 0.8 2.4 1.6 VCE =3V TC =100˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 100 IC /IB=250 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 102 103 104 105 VCE =3V 25˚C –25˚C TC =100˚C Collector current IC (A) Forward current transfer ratio hFE 0.1 1 10 1000.3 3 30 100 300 1000 3000 10000 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚C ICP IC t=10ms 300ms 1ms2SD1261 2SD1261A Collector to emitter voltage VCE (V) Collector current IC (A) 10–4 1010–3 10–110–2 11 0 3102 104 10–2 10–1 103 102 (1) Without heat sink (2) With a 50 · 50 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)