2SD1258 PANASONIC

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Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio n Features l High foward current transfer ratio hFE l Satisfactory linearity of foward current transfer ratio hFE l N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC IB PC Tj Tstg Ratings 200 150 2.5 0.1 1.3 150 –55 to +150 Unit V V V A A A W n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Symbol ICBO IEBO V CEO hFE * V CE(sat) fT Conditions V CB = 200V, IE = 0 V EB = 6V , IC = 0 IC = 25mA, IB = 0 V CE = 4V , IC = 0.2A IC = 0.5A, IB = 0.02A V CE = 4V , IC = 0.1A, f = 10MHz min 150 500 typ max 100 100 2000 Unit mA mA V V MHz *hFE Rank classification Rank Q P hFE 500 to 1200 800 to 2000 TC =25°C Ta=25°C Unit: mm 1:Base 2:Collector 3:Emitter N Type Package 8.5–0.2 6.0–0.5 10.0–0.310.5min. 2.0 1.5–0.1 1.5max. 0.8–0.1 5.08–0.5 2.54–0.3 1.1max. 0.5max. 1.0–0.1 3.4–0.3 213 Unit: mm 8.5–0.2 4.4–0.5 2.0 10.0–0.3 14.7–0.5 4.4–0.5 6.0–0.3 3.4–0.3 2.54–0.3 5.08–0.5 1.0–0.1 0.8–0.1 1.5 –0.4 3.0 +0.4 –0.2 0 to 0.4 1.1 max. R0.5 R0.5 123 1:Base 2:Collector 3:Emitter N Type Package (DS) Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 2000) in the rank classification.

PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I C Area of safe operation (ASO) R th(t)—t 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) With a 50 · 50 · 2mm Al heat sink (3) Without heat sink (PC =1.3W) (1) (2) (3) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 0.5 0.4 0.3 0.2 0.1 TC =25˚C IB=400µA 350µA 300µA 250µA 200µA 150µA 100µA 50µA Collector to emitter voltage VCE (V) Collector current IC (A) 0.01 3 10.10.03 0.3 0.01 0.03 0.1 0.3 IC /IB=25 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 3 10.10.03 0.3 0.01 0.03 0.1 0.3 IC /IB=25 25˚C –25˚C TC =100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 100 300 1000 3000 10000 VCE =4V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 100 300 1000 3000 10000 VCE =4V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚C ICP IC t=10ms 1ms 300ms Collector to emitter voltage VCE (V) Collector current IC (A) 10–4 1010–3 10–110–2 11 0 3102 104 10–2 10–1 103 102 (1) Without heat sink (2) With a 50 · 50 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)