2SB928 PANASONIC

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2SB928, 2SB928A Silicon PNP epitaxial planar type For power amplification For TV vartical deflection output Complementary to 2SD1250 and 2SD1250A n Features l High collector to emitter VCEO l High collector power dissipation PC l N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –200 –150 –180 1.3 150 –55 to +150 Unit V V V A A W 2SB928 2SB928A T C =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Symbol ICBO IEBO V CBO V CEO V EBO hFE1 * hFE2 V BE V CE(sat) fT Conditions V CB = –200V , IE = 0 V EB = –4V , IC = 0 IC = –500mA, IE = 0 IC = –5mA, IB = 0 IE = –500mA, IC = 0 V CE = –10V , IC = –150mA V CE = –10V , IC = –400mA V CE = –10V , IC = –400mA IC = –500mA, IB = –50mA V CE = –10V , IC = – 0.5A, f = 10MHz min –200 –150 –180 typ max –50 –50 240 Unit mA mA V V V V V MHz 2SB928 2SB928A*hFE1 Rank classification Rank Q P hFE1 60 to 140 100 to 240 Note: Ordering can be made by the common rank (PQ rank hFE1 = 60 to 240) in the rank classification. Unit: mm 1:Base 2:Collector 3:Emitter N Type Package 8.5–0.2 6.0–0.5 10.0–0.310.5min. 2.0 1.5–0.1 1.5max. 0.8–0.1 5.08–0.5 2.54–0.3 1.1max. 0.5max. 1.0–0.1 3.4–0.3 213 Unit: mm 8.5–0.2 4.4–0.5 2.0 10.0–0.3 14.7–0.5 4.4–0.5 6.0–0.3 3.4–0.3 2.54–0.3 5.08–0.5 1.0–0.1 0.8–0.1 1.5 –0.4 3.0 +0.4 –0.2 0 to 0.4 1.1 max. R0.5 R0.5 123 1:Base 2:Collector 3:Emitter N Type Package (DS)

Power Transistors 2SB928, 2SB928A PC —T a I C —V CE IC —V BE V CE(sat)—I C hFE —I C fT —I C Area of safe operation (ASO) R th(t)—t 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) With a 50 · 50 · 2mm Al heat sink (3) Without heat sink (PC =1.3W) (1) (2) (3) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) –600 –500 –400 –300 –200 –100 TC =25˚C –4.0mA –3.5mA –3.0mA –2.5mA –2.0mA –1.5mA –1.0mA – 0.5mA IB=–4.5mA Collector to emitter voltage VCE (V) Collector current IC (A) –2.0 –1.6 –1.2 – 0.8 – 0.4 VCE =–10V 25˚C –25˚C TC =100˚C Base to emitter voltage VBE (V) Collector current IC (A) – 0.01 – 0.03 – 0.1 – 0.3 –10 IC /IB=10 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 100 300 1000 3000 10000 VCE =–10V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 100 300 1000 3000 10000 VCE =–10V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) – 0.01 –10 – 0.1 – 0.03 – 0.3 Non repetitive pulse TC =25˚C 1ms 5ms 2SB928A 2SB928 ICP IC t=0.5ms 300ms Collector to emitter voltage VCE (V) Collector current IC (A) 10–4 1010–3 10–110–2 11 0 3102 104 10–2 10–1 103 102 (1) (2) (1) Without heat sink (2) With a 50 · 50 · 2mm Al heat sink Time t (s) Thermal resistance Rth(t) (˚C/W)