2SD1250_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

www.kexin.com.cn 1 Transistors NPN Transistors 2SD1250 ■ Features

  • High forward current transfer ratio hFE which has satisfactory linearity
  • Low collector to emitter saturation voltage VCE(sat)
  • Complementary to 2SB928 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm

1 Base

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 200 Collector - Emitter Voltage VCEO 150 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 2 Collector Current - Pulse ICP 3 Collector Power Dissipation Tc = 25℃ 30 Ta = 25℃ 1.3 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A PC W ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 500 μA， IE= 0 200 Collector- emitter breakdown voltage VCEO Ic= 5 mA， IB= 0 150 Emitter - base breakdown voltage VEBO IE= 500μA， IC= 0 6 Collector-base cut-off current ICBO VCB= 200 V , IE= 0 50 Emitter cut-off current IEBO VEB= 5V , IC=0 50 Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB=50mA 1 Base - emitter saturation voltage VBE(sat) IC= 500 mA, IB= 50mA 1.2 Base - emitte voltage VBE VCE= 10V, IC= 400mA 1 hFE(1) VCE= 10V, IC= 150mA 60 240 hFE(2) VCE= 10V, IC= 400mA 50 Transition frequency fT VCE= 10V, IC= 500mA,f=1MHz 20 MHz DC current gain V uA V ■ Classification of hfe(1) Type 2SD1250-Q 2SD1250-P Range 60-140 100-240

www.kexin.com.cn2 Transistors NPN Transistors 2SD1250 ■ Typical Characterisitics PC IaT— C — VCE IC — VBE VCE(sat) — IC hFE — IC fT — IC R)OSA( noitarepo efas fo aerA th(t) — t 0610 40 12080 14020 10060 (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) (1) (2) (3) Ambient temperature Ta (˚C) Collector power dissipation PC (W) 420 20164 128 1.2 1.0 0.8 0.6 0.4 0.2 IB=7mA 6mA 5mA 4mA 3mA 2mA 1mA TC=25˚C Collector to emitter voltage VCE (V) Collector current IC (A) 1.2 1.0 0.8 0.6 0.4 0.2 TC=100˚C 25˚C –25˚C Base to emitter voltage VBE (V) Collector current IC (A) 0.01 0.1 10.03 0.3 0.01 0.1 0.03 0.3 IC/IB=10 TC=100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 100 300 1000 3000 10000 VCE=10V 25˚C –25˚C TC=100˚C Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 0.1 0.3 100 300 1000 VCE=10V f=1MHz TC=25˚C Collector current IC (A) Transition frequency fT (MHz) 1 10 100 10003 30 300 0.001 0.003 0.01 0.03 0.1 0.3 Non repetitive pulse TC=25˚CICP IC 5ms 1ms t=0.5ms2SD1250 Collector to emitter voltage VCE (V) Collector current IC (A) 10–4 1010–3 10–110–2 011 3102 104 10–2 10–1 103 102 (1) (2) (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink Time t (s) Thermal resistance Rth(t) (˚C/W)