2SD1249 PANASONIC

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2SD1249, 2SD1249A Silicon NPN triple diffusion planar type For low-freauency power amplification n Features l High collector to base voltage VCBO l N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 350 400 250 300 1.5 0.75 1.3 150 –55 to +150 Unit V V V A A W 2SD1249 2SD1249A 2SD1249 2SD1249A TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol ICES ICEO IEBO V CEO hFE1 * hFE2 V BE V CE(sat) fT ton tstg tf Conditions V CE = 350V , VBE = 0 V CE = 400V , VBE = 0 V CE = 150V , IB = 0 V CE = 200V , IB = 0 V EB = 5V , IC = 0 IC = 30mA, IB = 0 V CE = 10V , IC = 0.3A V CE = 10V , IC = 1A V CE = 10V , IC = 1A IC = 1A, IB = 0.2A V CE = 10V , IC = 0.2A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, V CC = 50V min 250 300 typ 0.5 0.5 max 250 1.5 Unit mA mA mA V V V MHz ms ms ms 2SD1249 2SD1249A 2SD1249 2SD1249A 2SD1249 2SD1249A *hFE1 Rank classification Rank R Q P hFE1 40 to 90 70 to 150 120 to 250 Unit: mm 1:Base 2:Collector 3:Emitter N Type Package 8.5–0.2 6.0–0.5 10.0–0.310.5min. 2.0 1.5–0.1 1.5max. 0.8–0.1 5.08–0.5 2.54–0.3 1.1max. 0.5max. 1.0–0.1 3.4–0.3 213 Unit: mm 8.5–0.2 4.4–0.5 2.0 10.0–0.3 14.7–0.5 4.4–0.5 6.0–0.3 3.4–0.3 2.54–0.3 5.08–0.5 1.0–0.1 0.8–0.1 1.5 –0.4 3.0 +0.4 –0.2 0 to 0.4 1.1 max. R0.5 R0.5 123 1:Base 2:Collector 3:Emitter N Type Package (DS)

Power Transistors 2SD1249, 2SD1249A PC —T a I C —V CE IC —V BE V CE(sat)—I C hFE —I C fT —I C Area of safe operation (ASO) R th(t)—t 0 160 40 120 80 14020 100 60 (1) TC =Ta (2) With a 50 · 50 · 2mm Al heat sink (3) Without heat sink (PC =1.3W)(1) (2) (3) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 1.2 1.0 0.8 0.6 0.4 0.2 IB=14mA 12mA 10mA 2mA 4mA 6mA 8mA TC =25˚C Collector to emitter voltage VCE (V) Collector current IC (A) 4.0 3.2 2.4 1.6 0.8 TC =100˚C 25˚C –25˚C VCE =10V Base to emitter voltage VBE (V) Collector current IC (A) 0.01 3 10.10.03 0.3 0.01 0.03 0.1 0.3 IC /IB=10 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 100 300 1000 3000 10000 VCE =10V TC =100˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 0.1 0.3 100 300 1000 VCE =10V f=10MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 ICP IC t=10ms 1ms 300ms 2SD1249 2SD1249A Non repetitive pulse TC =25˚C Collector to emitter voltage VCE (V) Collector current IC (A) 10–4 1010–3 10–110–2 11 0 3102 104 10–2 10–1 103 102 (1) (2) (1) Without heat sink (2) With a 50 · 50 · 2mm Al heat sink Time t (s) Thermal resistance Rth(t) (˚C/W)