2SD1246

2SB926 SANYO

Document overview

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Technical content

Features

• Adoption of FBET, MBIT processes ¢ Low saturation voltage « Large current capacity and wide ASO (|): 2SB926 Absolute Maximum Ratings/Ta = 25°C unit Collector to base voltage VcBo {-)30 Vv Collector to emitter voltage VcEO (-)25 v Emitter to base voltage VEBO (-)6 Vv Collector current Ic {(-)2 A Collector Current(Pulse) Top {-)5 A Collector dissipation Pc 0.75 Ww Junction temperature Tj 150 °C Storage temperature Tstg —65~+150 °C Electrical Characteristics/Tg = 25°C min typ) max unit Collector cutoff current ICBO Vos = (-)20 V, Ie =0 (0.1 yA Emitter cutoff current 1EBO Vep=(-)4V,Ic=0 (-)0.1 pA DC current gain heel) Voce = (-)2 V, Ic=(-)100mA 100" 560* hre(2) VCE = (-)2 V, Ic = (-)1.5 A, pulse 65 130 Gain-bandwidth product fT Vee = (-)10 V, Ic = (-) 50 mA 150 MHz Common base output capacitance Cob Vc = (—)10 V, f = 1 MHz 19 pF {32} Collector to emitter saturation voltage VCE(sat) Io = (-)1.5 A, IB = (—)75 mA, pulse 018 #O4 V (0.35) {—0.6) Base to emitter saturation voltage VBE(sat) !c=(-)1.5A, Ip =(-)75mA (-)0.85 (-)1.2) V Collector to base breakdown voltage V(BR)CBO IC=(—)10 HA, IE =0 (30 v Collector to emitter breakdown voltage V(BR)CEO IC =(—)1 mA, RBE = (-)25 Vv Emitter to base breakdown voltage V(BR)EBO IE = (—)10 uA, Ic =0 (6 v * The 2SB926/2SD1246 are classified by 100 mA heE as follows:

100 R 200 140 S 280 200 T 400 280 U 560

(unit: mm) 20 0.66 O45, I ae 2 ae E=-ta ec iv =e oe 0.45 ‘| JEDEC: TO-92 B. Base EIAJ : SC-43 Cc. Collector SANYO: NP E, Emitter SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 4077KI/2275MW/D282KI,TS No.1030-1/3

25B926/2SD1246 , SO ° Peer LE “SRS - co RRS 7 ae SS fi t ea & 2 me ee oe 1 ta Alt | TT

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4 Ip=0

oF ~20 ~00 600 -800 ~1000 5 200 400 600 ao 100 Collector to emitter voltage, Vee — mV Collector to emitter voltage, Voe — mV oe ae ee Wes=2 aw | | ee eS rt ee [| | é Pr Zo) Sb Ee ad a 5 ES Be fee [| | fol | Fe a Fo ER = £ 8 08 —— - 2

04 For PNP, minus sign is _ po Li TTT

°> 02 04 O06 08 10 42 8 0.01 oO. 10 3 0 Base to emitter voltage, VBE — V Collector current, Ig — A fr - Ic . Cob - V¢B 1000 a 2 (TT TT TT vee= iv] 1 ard ERE $3 2D 1246 B= pol eee Ts | Jeo) | Se fe pS TT pes | Ae PP fd | : g [Nie 1™ 2,7 ¢ 3 Cy bars Py 00 8 0 I_sT 0 > Collector current, I¢ — mA Collector to base voltage, Vog ~ V tn

8 Peer EE

; PTT TP Ty te ty tt o a a a Pot tty Se s ETT TT geo N § iter erat hUmwelLE LT TN TT cd 3 & SHS Ne 3 o1 J ons A . : HCC ee a € Tr ee eo 2% ‘ § recat sl ET TT AI 5 or || FT | For PNP, minus sign is omitted | ao 1 | | tT | TK] oe 0.01 01 +0 0 2 0 © 0 WO m HO 160

38 Collector current, Ic — A Ambient temperature, Tg —°C

No.1030-2/3

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20 FEES

a gil ITT TIS 8 2889267 28D 1246 MLE For PNP, minus sign is omitted. IN. | e100 1 Single pulse SH Ta=25 TT]

2 T10 rd

Collector to emitter voltage, Voce — V : No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the ike, the failure of which may directly or indirectly cause injury, death or property loss. M Anyone purchasing any products described or contained herein for an above-mentioned use shall @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Wi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. eee No.1030-3/3