2SD1244 PANASONIC

Document overview

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Technical content

Silicon NPN epitaxial planer type For low-frequency power amplification n Features l Low collector to emitter saturation voltage VCE(sat). l Satisfactory operation performances at high efficiency with the low-voltage power supply. l M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Collector EIAJ:SC–71 3:Emitter M Type Mold Package 6.9–0.1 1.0–0.1 1.0 2.5–0.1 1.0 1.5 1.5 R0.9 R0.9 R0.7 0.4 0.85 4.1–0.2 4.5 –0.1 2.5 2.5 123 Symbol V CBO V CEO V EBO ICP IC PC * Tj Tstg Ratings 150 –55 ~ +150 Unit V V V A A W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V CEO V EBO hFE1 *1 hFE2 V CE(sat) fT C ob Conditions V CB = 10V , IE = 0 V EB = 7V , IC = 0 IC = 1mA, IB = 0 IE = 10mA, IC = 0 V CE = 2V , IC = 0.5A*2 V CE = 2V , IC = 2A*2 IC = 3A, IB = 0.1A*2 V CB = 6V , IE = –50mA, f = 200MHz V CB = 20V , IE = 0, f = 1MHz min 230 150 typ 150 max 0.1 0.1 600 Unit mA mA V V V MHz pF *1hFE1 Rank classification Rank Q R hFE1 230 ~ 380 340 ~ 600 *2 Pulse measurement * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion

PC — Ta I C — V CE IC — V BE V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 1.2 1.0 0.8 0.6 0.4 0.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 2.4 2.0 1.6 1.2 0.8 0.4 Ta=25˚C IB=7mA 6mA 5mA 4mA 3mA 2mA 1mA Collector to emitter voltage VCE (V) Collector current IC (A) VCE =2V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.001 0.003 0.01 0.03 0.1 0.3 Ta=75˚C 25˚C –25˚C IC /IB=30 Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3

100 IC /IB=30

Ta=–25˚C 25˚C 75˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 600 500 400 300 200 100 Ta=75˚C 25˚C –25˚C VCE =2V Collector current IC (A) Forward current transfer ratio hFE 400 300 100 250 350 200 150 VCB =6V Ta=25˚C Emitter current IE (A) Transition frequency fT (MHz ) 1 3 10 30 100 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 Single pulse

Ta=25˚C t=10ms t=1s ICP IC Collector to emitter voltage VCE (V) Collector current IC (A)