2SD1221_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

www.kexin.com.cn 1 Transistors NPN Transistors 2SD1221 ■ Features

  • Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A)
  • High power dissipation: PC = 20 W (Tc = 25°C)
  • Complementary to 2SB906 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm

1 Base

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 Emitter - Base Voltage VEBO 7 Collector Current - Continuous IC 3 Base Current IB 0.5 Collector Power Dissipation Ta = 25℃ 1 Tc = 25℃ 20 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V A PC W ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 50 mA， IB= 0 60 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 7 Collector-base cut-off current ICBO VCB= 60 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 7V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=3 A, IB=300mA 0.4 1 Base - emitter saturation voltage VBE(sat) IC=3 A, IB=300mA 1.2 Base - emitte voltage VBE VCE= 5V, IC= 500mA 0.7 1 hFE(1) VCE= 5V, IC= 500mA 60 300 hFE(2) VCE= 5V, IC= 3 A 20 Turn-on time ton 0.8 Storage time tstg 1.5 Fall time tf 0.8 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 70 pF Transition frequency fT VCE= 5V, IC= 500mA 3 MHz See specified Test Circuit us DC current gain V uA V ■ Classification of hfe(1) Type 2SD1221-O 2SD1221-Y 2SD1221-G Range 60-120 100-200 150-300

www.kexin.com.cn2 Transistors NPN Transistors 2SD1221 Switching Time Test Circuit IB1 = −IB2 = 0.2 A, DUTY CYCLE ≤ 1% 20 μs INPUT IB1 IB2 OUTPUT VCC = 30 V IB1 15 Ω IB2 ■ Typical Characterisitics hFE – IC VCE (sat) – IC IC – VCE IC – VBE Collector-emitter voltage VCE (V) Collector current IC (A) Base-emitter voltage VBE (V) Collector current IC (A) Collector current IC (A) DC current gain hFE Collector current IC (A) Collector-emitter saturation voltage VCE (sat) (V) Common emitter Tc = 25°C 3.0 2.0 1.0 2 4 6 8 IB = 10 mA Common emitter VCE = 5 V 3.0 2.0 1.0 0.4 0.8 1.2 1.6 25 −25 Tc = 100°C Common emitter VCE = 5 V 500 100 0.03 0.1 0.3 1 3 300 −25 Tc = 100°C Common emitter IC/IB = 10 0.5 0.3 0.1 0.05 0.02 0.03 0.1 0.3 1 3 −25 Tc = 100°C

www.kexin.com.cn 3 Tran sistors NPN Transistors 2SD1221 ■ Typical Characterisitics Ambient temperature Ta (°C) PC – Ta Collector power dissipation PC (W) Collector-emitter voltage VCE (V) Safe Operating Area Collector current IC (A) (1) Tc = Ta infinite heat sink (2) Ceramic substrate 50 mm × 50 mm × 0.8 mm (3) No heat sink 25 50 75 100 125 150 175 (1) (2) (3) *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IC max (continuous) IC max (pulsed)* VCEO max 1 ms* 10 ms* DC operation (Tc = 25°C) 30 100 3 10 1 0.1 0.3 0.5 3 100 ms*