2SD1211 PANASONIC

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Technical content

Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB987 n Features l High collector to emitter voltage VCEO . l Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package 5.9–0.2 2.54–0.15 0.7–0.1 4.9–0.2 8.6–0.2 0.7 +0.3 –0.2 13.5–0.53.2 0.45 +0.2 –0.1 1.271.27 0.45 +0.2 –0.1 13 2 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 120 120 0.5 150 –55 ~ +150 Unit V V V A A W n Electrical Characteristics (Ta=25˚C) Parameter Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol V CEO V EBO hFE1 * hFE2 V CE(sat) V BE(sat) fT C ob Conditions IC = 0.1mA, IB = 0 IE = 10mA, IC = 0 V CE = 10V , IC = 150mA V CE = 5V , IC = 500mA IC = 300mA, IB = 30mA IC = 300mA, IB = 30mA V CB = 10V , IE = –50mA, f = 200MHz V CB = 10V , IE = 0, f = 1MHz min 120 130 typ 200 max 330 1.2 Unit V V V V MHz pF *hFE1 Rank classification Rank R S hFE1 130 ~ 220 185 ~ 330

PC — Ta I C — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 1.2 1.0 0.8 0.6 0.4 0.2 Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 200 160 120 Ta=25˚C 0.2mA 0.1mA 0.3mA 0.4mA 0.5mA 0.6mA 0.7mA 0.8mA 0.9mA IB=1.0mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3

100 IC /IB=10

25˚C –25˚C Ta=75˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 Ta=–25˚C 25˚C 75˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 600 500 400 300 200 100 Ta=75˚C 25˚C –25˚C IC /IB=10 Collector current IC (A) Forward current transfer ratio hFE 400 300 100 250 350 200 150 VCB =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 1 10 100 10003 30 300 0.001 0.003 0.01 0.03 0.1 0.3

10 Single pulse

Ta=25˚C t=10ms t=1s ICP IC Collector to emitter voltage VCE (V) Collector current IC (A) 2SD1211