2SD1119-HF_15 KEXIN

Document overview

www.kexin.com.cn 1 Tran sistors ■ Features

Collector Current Capability IC=3 A
Collector Emitter Voltage VCEO=25 V 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 25 Emitter - Base Voltage VEBO 7 Collector Current - Continuous IC 3 A Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 40 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 25 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 7 Collector-base cut-off current ICBO VCB= 40 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 7V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=3 A, IB=100 mA 1 Base - emitter saturation voltage VBE(sat) IC=3 A, IB=100 mA 1.2 VCE= 2V, IC= 500mA 230 600 VCE= 2V, IC= 2 A 150 Collector output capacitance Cob VCB= 20V, IE= 0,f=1MHz 50 pF Transition frequency fT VCE= 6V, IC= 50 mA,f=200MHz 150 MHz V uA V DC current gain hFE ■ Classification of hfe(1) Type 2SD1119-Q-HF 2SD1119-R-HF Range 230-380 340-600 Marking TQ F TR F
Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish NPN Transistors 2SD1119-HF