2SD1110 SAVANTIC
Document overview
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1110
DESCRIPTION
- With TO-3PN package
- Complement to type 2SB849
- Wide area of safe operation
APPLICATIONS
- For use in low frequency power amplifier applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
ABSOLUTE MAXIMUM RATINGS (TC=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7 A PC Collector power dissipation T C=25 80 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3PN) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1110 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA ;IB=0 120 V VCE(sat) Collector-emitter saturation voltage I C=5A ;IB=0.5A 2.0 V VBE(sat) Base-emitter saturation voltage I C=5A ;IB=0.5A 2.0 V ICBO Collector cut-off current V CB=120V; IE=0 50 µA IEBO Emitter cut-off current V EB=6V; IC=0 50 µA hFE-1 DC current gain I C=20mA ; VCE=5V 20 hFE -2 DC current gain I C=1A ; VCE=5V 40 200 COB Output capacitance I E=0 ; VCB=10V;f=1MHz 190 pF fT Transition frequency I C=0.2A ; VCE=5V 15 MHz
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1110 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)