2SD1110 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1110
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= 120V(Min)
- Good Linearity of hFE
- Complement to Type 2SB849
APPLICATIONS
- Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICP Collector Current-Pulse 12 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1110
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A 2.0 V VBE(sat) Base -Emitter Saturation Voltage IC= 5.0A; IB= 0.5A 2.0 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 50 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 50 μA hFE-1 DC Current Gain IC= 50mA; VCE= 5V 20 hFE-2 DC Current Gain IC= 1A; VCE= 5V 40 200 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 190 pF fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 5V 15 MHz hFE-2 Classifications S R Q 40-80 60-120 100-200 isc Website：www.iscsemi.cn 2