2SD1073 SAVANTIC
Document overview
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1073
DESCRIPTION
- With TO-220 package
- High DC current gain
- DARLINGTON
- Low saturation voltage
APPLICATIONS
- Audio power amplifiers
- Relay and solenoid drivers
- Motor controls
- General purpose power amplifiers PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 30 V IC Collector current-continuous 4 A IB Base current 0.3 A PC Collector power dissipation T C=25 60 W Tj Junction temperature 150 Tstg Storage temperature -55~150 THERMAL CHARACTERISTICS SYMBOL CHARACTERISTICS MAX UNIT R:jc Thermal resistance junction to case 2.0 /W
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1073 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA ; IB=0 300 V V(BR)CBO Collector-base breakdown voltage I C=0.1mA ; IE=0 250 V V(BR)EBO Emitter-base breakdown voltage I E=10mA ; IC=0 30 V VCEsat Collector-emitter saturation voltage I C=1A;IB=10mA 1.5 V VBEsat Base-emitter saturation voltage I C=1A;IB=10mA 2.0 V ICBO Collector cut-off current V CB=300V; IE=0 0.1 mA IEBO Emitter cut-off current V EB=30V; IC=0 0.1 mA hFE DC current gain I C=2A ; VCE=2V 1000
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1073 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)