2SD1071 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN Darlington Power Transistor 2SD1071
DESCRIPTION
- Low Collector Saturation Voltage
- High DC Current Gain
- High Reliability
APPLICATIONS
- Audio power amplifiers
- Relay & solenoid drivers
- Motor controls
- General purpose power amplifiers
- Including zener diode ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage (450) V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V VZ Zener Voltage 300 V IC Collector Current-Continuous 6 A IB Base Current-Continuous 2.5 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.0 ℃/W
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 2 isc Silicon NPN Darlington Power Transistor 2SD1071
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VZ Zener Voltage I Z= 0.1mA 300 450 V V(BR)EBO Emitter-Base Breakdown Voltage I E= 150mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage I C= 4A; IB= 15mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage I C= 4A; IB= 15mA 2.0 V ICBO Collector Cutoff Current V CB= 300V; IE= 0 0.1 mA IEBO Emitter Cutoff Current V EB= 6V; IC=0 150 mA hFE DC Current Gain I C= 4A; VCE= 2V 500