2SD1061 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1061
DESCRIPTION
- With TO-220 package
- Low collector saturation voltage
- Wide ASO(safe operating area)
- Complement to type 2SB825
APPLICATIONS
- Universal high current switching as solenoid driving,
- High speed inverter and converter. relay drivers PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 7 A ICP Collector current-peak 12 A PC Collector power dissipation T C=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1061 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=1mA ;RBE=∞ 50 V V(BR)CBO Collector-base breakdown voltage I C=1mA ;IE=0 60 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage I C=4A, IB=0.4A 0.4 V ICBO Collector cut-off current V CB=40V;IE=0 0.1 mA IEBO Emitter cut-off current V EB=4V; IC=0 0.1 mA hFE-1 DC current gain I C=1A ; VCE=2V 70 280 hFE-2 DC current gain I C=5A ; VCE=2V 30 fT Transition frequency I C=1A ; VCE=5V 10 MHz Switching times ton Turn-on time 0.2 μs ts Storage time 0.9 μs tf Fall time IC=2A IB1=- IB2=0.2A VCC=20V;RL=10Ω 0.3 μs hFE-1 classifications Q R S 70-140 100-200 140-280
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1061 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1061