2SB825 SANYO
Document overview
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Technical content
Features
+ Low saturation voltage : Vop(sat)=(—)0.4V max. + Wide ASO, ( ) 2SB825 Absolute Maximum Ratings at Ta= 25°C unit Collector-to-Base Voltage Vcso (-)60 Vv Collector-toEmitter Voltage VcEeo (—)50 Vv Emitter-toBase Voltage VEBO (-)6 v Collector Current Ic (-)7 A Collector Current(Pulse) Iop (-)12 A Collector Dissipation Po To= 25°C 40 Ww Junction Temperature Tj 150 °C Storage Temperature Tstg —55 to+150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector CutoffCurrent Ico Vop=(—)40V Ig=0 (-)0.1 mA Emitter CutoffCurrent Iggo Vepo=(—)4V,Io=0 (-)0.1 mA DC Current Gain hpg(1) Ver=(—-)2V,Ic¢=(-)1A TOK 280K hpg(2) Vce=(—)2V,Io=(—)5A 30 Gain Bandwidth Product fr Vor =(—)5V,Io=(-)1A 10 MHz C-E Saturation Voltage Vog(sat) Ic=(—)4A,Ip=(—)0.4A (-)04 V C—B Breakdown Voltage Vigrycpo Ico=(—)1mA,Ip=0 (-)60 v C-—E Breakdown Voltage Vigrycro Ic=(—)1mA, Rpr=@ (-)50 Vv E-—B Breakdown Voltage Vigryepo Ip=(—)1mA,Ic=0 (-)6 v Turn-ON Time ton At the test circuit. 0.2 sS Fall Time te 4 (0.1)0.3 ys Storage Time tstg 4 (0.7)0.9 ny X : 25B825 /2SD1061 are classified by 1A hpg as follows. Switching Time Test Circuit Package Dimensions 2010B SL (unit:mm) IN 1 b-— 48.0 27 he [sal nae cetrblns Ro 9 La ey YR 0 4 ee Se a . " * o38 12° gr Emitter 4 eal EP C: Collector B: Base { =—10Ig9=Ig=2A ” TB! any) ww =| JEDEC: TO-220aB (For PNP, the polarity is reversed.) EIAJ : SC-46 Unit (resistance: ©, capacitance: F) SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN D251MH / 4027KV/ 3205MW/ 0619KI No.687-1/3
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Oe + -{—-1-4 2 gto EEE WA bg Ht 2 \\ 4 v () oo ° s jit aaa WW Re a] No NT 8 (Single pulse with regard ° (Single pulse with regard 1 9.4 {22.1 10 100 ms) © 4,[t21 to 100 ms) 1.0 -”0 -100 1.0 0 wo Collector-to-Emitter Voltage, Vog -Vv Collector-to-Emitter Voltage,VcE - V PC - Tc 40) ‘doo IN ‘| 4 NN a IN “4 OD 5. IN x g Oo 2 Cy Cy Co roy TO i” 1 Case Temperature,Te - °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnity and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally i Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No687-3/3