2SB815 SANYO
Document overview
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Technical content
Features
- Very small package enabling compactness and slimness of sets > Large current capacity (!¢ = 0.7A) and low saturation voltage { ): 28B815 Absolute Maximum Ratings/T = 25°C. unit Collector to base voltage VcBO ({-)20 Vv Collector to emitter voltage VcEO {-)15 Vv Emitter to base voltage VeBo (5 Vv Collector current Io {-}0.7 A Collector Current(Pulse) Top (315 0A Collector dissipation Pc 200 mw Junction temperature Tj 1250 °C Storage temperature Tstg —55~+125 °C Electrical Characteristics/T, = 25°C min typ. max unit Collector cutoff current IcBo Ves = (-)15V, le =0 (0.1 pA Emitter cutoff current lEBO Vep = (—-)4V, Ic=0 (0.1 pA DC current gain hee(1) Voce = (-)2V, Ic = (—)50 mA 200° 900" (200*) (600*) . F hrE(2) VceE=(-)2V,Ic=(-)500mA 80 Gain band-width product fT VCE = {-)10V, Ic =(—)50 mA 250 MHz Output capacitance Cob Vee = (-)10V, f= 1 MHz (13) pF . | 8 pF Collector to emitter saturation voltage VCE(sat)(1)_ IC = (-) 5 mA, Ip = (-) 05 mA (~15) (-35) mV 10 25 mV VCE(sat}{2). Ic = (—) 100 mA, Ip = (—) 10 mA {-60)(—120) mv _ _ 30 80 mv “; The 2SB815, 2SD 1048 are classified by 50 mA he¢ as follows: 283815 | 2sp1088 (Note) Marking: B (288815), X (2801048) Tig Tank! 6,7 (288815), 6,748 (28D 1048) Package Dimensions 2018A (unit : mm) n yt . eB G 4 kos. Peis Lees C: Collector B: Base | | E: Bmitter : Kt 70.4 SANYO: CP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 8258MO/4017KL/2173KLTS No.694-1/3
Ic - Vo I¢_- Vee 800 600 + |] fo 1 B0icse) So | IK 2, V/V 2 _| - 4 ote ey } 4 El LZ ee Arne 5-100 ont = 400 f. — Be Ma 8 ol: Ln 5 > —— 2 7S Ae Teo | |) A ° 701 02 03 04 05 i) On 02 . O3 04 0s Collector to emitter voltage, VCE — V Collector to emiter volta VcE-V Ig - Vee T- I¢ ee Se * ex, TTT Tey oF oF Ue oa ——.— ae an 2 ee | | pa BL Ej fee g zy & 2% ] Bi TP Trt Ter BEDRMS salen °% 02 04 06 o8 1.0 1 0 100 Base to emitter voltage, VBE-V 4 Collector currents Ic —mA hre - Ic 1 cob - Vop PHea es 1 ee bee pS op ONS ee ao PNT ee 6 “EA 2 {iy 2 5 oe elit Ti ttt Tif eluting E 10 LLL | babel situs sioh is liven E to, {Fey PN ys an is omitted.) 1.0 oo Collector current. I¢ mA 8 Collector to base voltage, VCR — V Sco Voe(sat) ~ I¢ 00 Po - Ta Poo woo ooo 2 4 250 i PO OO i rit pS BE € £5 ee 2 150 SJ Esol ttt ft tt [Ada | #8 Ew rs ES IN BSS TTT eer | ee : or i | | NJ Jchpeesr ere 8” Q = =t In/ Ip=10 Collector current, IC — mA Ambient temperature, Ta — °C. No.694-2/3
TE No products described or contained herein’ are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. W Anyone purchasing any products described or contained herein for an above-mentioned use shall ©® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors or any of . their officers and employees jointly or severally. I Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.694-3/3