2SD1046 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1046
DESCRIPTION
- With TO-3PN package
- Complement to type 2SB816
- Wide area of safe operation
APPLICATIONS
- For LF power amplifier, 50W output large power switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 8 A ICM Collector current -peak 12 A PC Collector power dissipation TC=25℃ 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -40~150 ℃ Fig.1 simplified outline (TO-3PN) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1046 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;RBE=∞ 120 V V(BR)CBO Collector-base breakdown voltage I C=5mA ;IE=0 150 V V(BR)EBO Emitter-base breakdown voltage I E=5mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage I C=5A ;IB=0.5A 1.0 2.0 V VBE Base-emitter on voltage I C=1A;VCE=5V 1.5 V ICBO Collector cut-off current V CB=80V IE=0 0.1 mA IEBO Emitter cut-off current V EB=4V; IC=0 0.1 mA hFE-1 DC current gain I C=1A ; VCE=5V 60 200 hFE-2 DC current gain I C=5A ; VCE=5V 20 fT Transition frequency I C=1A ; VCE=5V 15 MHz COB Collector output capacitance f=1MHz;V CB=10V 160 pF Switching times ton Turn-on time 0.22 μs tstg Storage time 6.66 μs tf Fall time IC=1.0A; IB1=-IB2=0.1A VCC=20V;RL=20Ω 1.02 μs hFE-1 Classifications D E 60-120 100-200
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1046 PACKAGE OUTLINE Fig.2 outline dimensions
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1046