2SD1044 ISC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1044

DESCRIPTION

  • High DC Current Gain : h FE= 700(Min.)@ IC= 1A, VCE= 4V
  • High Collector-Emitter Breakdown Voltage- : V (BR) CEO= 80V(Min)
  • Wide Area of Safe Operation

APPLICATIONS

  • Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A IB B Base Current- Continuous 3 A PC Collector Power Dissipation @TC=25℃ 60 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1044

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCER Collector-Emitter Breakdown Voltage IC= 50mA, RBE= 1kΩ 100 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA, IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A, IB= 30mA B 1.7 V ICBO Collector Cutoff current VCB= 100V, IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 mA hFE DC Current Gain IC= 1A; VCE= 4V 700 10000 ‹ hFE classifications Q P O 700-2500 2000-5000 4000-10000 isc Website：www.iscsemi.cn