2SD1032 ISC

Document overview

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Technical content

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1032

DESCRIPTION

  • Collector-Emitter Breakdown Voltage- : V (BR)CEO= 60V(Min)
  • Large Collector Power Dissipation
  • Complement to Type 2SB812

APPLICATIONS

  • Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1032

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1.5 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 4V 2 V ICEO Collector Cutoff Current VCE= 30V ; IB= 0 700 μA ICES Collector Cutoff Current VCE= 60V ; VBE= 0 400 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1 mA hFE-1 DC Current Gain IC= 1A ; VCE= 4V 40 250 hFE-2 DC Current Gain IC= 3A ; VCE= 4V 15 Switching times ton Turn-On Time 0.2 μs toff Turn-Off Time IC= 4A ,IB1= -IB2= 0.4A 1.4 μs ‹ hFE-1 Classifications R Q P 40-90 70-150 120-250 isc Website：www.iscsemi.cn 2