2SD1015 SONY
Document overview
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Technical content
a Silicon NPN LEC Symmetry Transistor et JRA. PFOFAT YF ® Vceo, Veco. Veco 2 50V © Vee tat), Vec toa) S0.5V at (OIG, d- i @hee, heen 150~ 1500 | rt #03 RAE Absolute Maximum Ratings T, = 25°C j Characteristics 2SD1015 i Collector-to-Base Voltage 140V oe Collector-to-Emitter Voltage 50V | Emitter-to-Collector Voltage 50V she Emitter-to-Base Voltage 50V Collector Current 2A 4 ba Z 1 miter Peak Collector Current le (peaky| BA (0.1 Sec.) di 1) os Emitter Current [tr | 2A is mm Base Current [is | O.5A Junction Temperature 150°C Storage Temperature -50 ~~ 150°C Collector Power Dissipation 900 mW ‘WAAVFtE Electrical Characteristics Tg = 25°C Characteristics [symbol | Conditions | Min. | Typ. | Max. | Unit Collector Cutoff Current Vea = 100V [ff 20 | pa Collector-to-Emitter Sustaining _ - fee fee fe) | Collector-to-Base Voltage Io =0.1 mA [ao | || Vv Emitter-to-Base Voltage Ie =0.1mA [so | | | Vv Collector-to-Emitter Saturation V, Ic=1A Vv Voltage CE (SAT)) |, = 10mA Emitter-to-Collector Saturation v, le=1A v Voltage Ec (SAT)| 1, =10mA Base-to-Emitter Saturation Ib=1A Voltage Ig =10mA Pf fs | v Foward h lo=10mA DC Current Gain * ret Vee =2V Reverse h le =10mA DC Current Gain FEAT | Vec=2V Foward h Ip=2A Pulse Current Gain FE2 Vee =2V Reverse hy le=2A Pulse Current Gain FER2 Vec =2V