2SB808 SANYO
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Ss A'VYO PNP/ NPN Epitaxial Planar Silicon Transistors : Low-Voltage Large-Current Amp Applications ( ):2sB808 Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Vopo (-)20 v Collector to Emitter Voltage VcEO (-)15 Vv . Emitter to Base Voltage VEBO (-)5 Vv Collector Current Ic {-)0.7 A Collector Current(Pulse) Iop (-)1.5 A Collector Dissipation Po 250 mW Junction Temperature Tj 125 °C Storage Temperature Tstg -55 to +125 °c Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current IcBo Vep=(-) 15V,Ip=0 (-)1.0 pA Emitter Cutoff Current IEBO VeB= (-) 4V,Ig=0 (-)1.0 ywA DC Current Gain hgg(1) Vcg=(-)2V,Tc=(-) 50mA 160* 960* AFE(2) Vog=(-) 2V,Ic=(-) 500mA 80 Pulse Gain-Bandwidth Product fr Vop=(-) LOV, Ic=(~) 50mA 250 MHz Common Base Output Capacitance cob Vop= (-) OV, £=1MHz (13) pF Collector toEmitter Satura~ Vog(sat)1 Ig=(-) 5mA,Ip=(-)0.5mA (- ae ) nv tion Voltage Veg(sat)2 Ic=(-)100mA,Ip=(-)10mA—(~' delg ) mv Base to Emitter Saturation VuE(sat) Ic=(-)100mA,Ip=(-)10mA (-) 0. 8(-)L. v Voltage Collector to Base Breakdown VBR) CBO IC=(~) 10vA,Ip=0 (-)20 Vv Voltage Collector to Emitter Breakdown V(gr)CcEO Ic=(~-) 1mA,RpE=co (-)15 Vv Voltage Emitter to Base Breakdown V(BR)EBO Ip=(-)1QA,Ig=0 (-)5 Vv Voltage * The 2SB808/2SD1012 are classified by 50mA hpp as follows : 2sp1012 Pc-Ta . * Bae i012 Package Dimensions 2033 ol ae nn ee (unit: mm) 2 gu - 3 15.0 - fo a t i rn I o_o SS zz; 7 f ra SS Te | . WIN 3 & bO — < ° 0.4 8 a B: Base ” 3 se NX C: Collector . 8 0 ee E: Emitter Ambient Temperature,Ta - "C SANYO: SPA SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN . 1115MY/1283KI,TS No.676-1/4
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Semf [TP | TT? PTT} og ees 8 pitt 2 +E | T PEING go fg DEP aS Tee 38 ml [17 TTT tT ee +, On M%, ag ofr CT err 7 | 5A SN | a ne gE ga Fa a = Ltt] a a) TTP Pe Nr gz a ef Leer terol & a = 4 33 - For es minus sign is opitted. oo Uy I [tT Tr Tit . Collector Current,I¢ - mA Collector to Emitter Voltage vce -v Sn re : ; No.676-2/4
Sample Application Circuit :*Low-voltage 3V(Po 120mW) ITL-OTL power amp. ig + Circuit configuration For obtaining an output of more than 100mW, the middle-point voltage at the output stage and the collector voltage of the driver transistor must be Vec/2.- Therefore, the output stage is of quasi complementary configuration composed of npn/npn.transistors. The phase is reversed by the 2SA608 and the middle- point voltage at the output stage and the collector voltage of the driver tran- sistor are made to be Voc/2 so that the output can be maximized. wo —DS442x2 Voces ¥ re) L, 1k Pom ae se
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1 ) y. \\o aye am YF, , k A He mt a Foy INPUT o> ir 63 H+ | /f 0 (t RZ 2scS36er —- 2SCS36E-— ZS AGOB EF 2SDI0I2FGx2 Unit(Resistance : 2 , Capacitance : F) R1 : Used control idle current For R1=8202 , use rank F for [TR4,5(2SD1012)]. For R1=6800 , use rank G for [TR4,5(2SD1012)]. .» Main Specifications Characteristic £2400H2 fe1kHz unit Current dissipation | Quiescent,total current] 11.0 to15.5 | 11.0to15.5 mA dissipation Output power THD=10% 120 to 125 127 to 130 mw Voltage gain Po=10mwW 43.3t0 45.5 | 43.5 to 45.7 dB Total harmonic dis- | Po=50mw 1.4 to2.6 1.3 to2.5 % tortion Input resistance Po=l0mw 10.4 to 20.5 | 11.0 to 21.0 ka Note : For above-mentioned hpg rank. , Po - Vi o THD - Po ee PO FREE 3 4 yg TTT TT a ee es A B 3 etry ae
2 A 4 Oe |
EOD) ERR 2 2 Re Z po Lil TT Pty ty ett tT 77 PT Tt i 8 rT TT ee | eo} pa i yoy | C PTV [ t ] rene |g 53 7 7 3 5 7 © 2 e's 57 23 8 7m 23 ANCE, — av Output Power,Po - mW a “No.676-3/4
. 2SB808/2SD1012 f Response Ipc - Po COO Tr) *# DTT TT ? i Penne LET TET TT Pg PT ° Po. J g HIN ae ‘LUA TTT NTT) “ll NG 2,117 Ut Typ ia eal a | ELL TTT Tg ao “8 ¥ — ° Cr > ae ||
0 Voo=3v 2
RL =80 EI nl OdB + 44.74B/ 1kHz e» T5709 23 57% 23 571% 29 5 7% b} 0 100 Frequency,f ~ Hz Output Power,Po - mW Py - Vj a er | | i e100 L—| sf, [fit fT i ae a 3 4 Fy [| & 3 RL=8Q THO= 10% » f= Iki ry 1.8 22 2.6 30 ery 8 Supply Voltage,Vcc - V HE No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss, Ml Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Aocept full responsibility and indemnify and defend SANYO ELECTRIC CO,, LTD, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally, Bi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees . are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.676=4/4