2SD1011

2SD1011 PANASONIC

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Technical content

Silicon NPN epitaxial planer type For low-frequency amplification n Features l High foward current transfer ratio hFE . l Low collector to emitter saturation voltage VCE(sat). l High emitter to base voltage VEBO . n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A 5.0–0.2 4.0–0.2 5.1–0.213.5–0.5 0.45 +0.2 –0.10.45 +0.2 –0.1 1.27 1.27 2.3–0.2 2.54–0.15 213 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 100 100 300 150 –55 ~ +150 Unit V V V mA mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage Symbol ICBO ICEO V CBO V CEO V EBO hFE * V CE(sat) fT NV Conditions V CB = 60V , IE = 0 V CE = 60V , IB = 0 IC = 10mA, IE = 0 IC = 1mA, IB = 0 IE = 10mA, IC = 0 V CE = 10V , IC = 2mA IC = 10mA, IB = 1mA V CB = 10V , IE = –2mA, f = 200MHz V CE = 10V , IC = 1mA, GV = 80dB R g = 100kW , Function = FLAT min 100 100 400 typ 0.05 200 max 100 1200 0.2 Unit nA mA V V V V MHz mV *hFE Rank classification Rank R S hFE 400 ~ 800 600 ~ 1200

PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB NV — I C NV — V CE 0 160 40 120 80 14020 100 60 500 400 300 200 100 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 2 10826 4 Ta=25˚C 20mA 30mA 40mA 50mA 60mA 80mA 10mA IB=100mA Collector to emitter voltage VCE (V) Collector current IC (mA ) VCE =10V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 IC /IB=10

25˚C –25˚C Ta=75˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 2000 1600 1200 800 400 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 200 160 120 VCB =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.01 0.03 0.1 0.3 1 100 VCE =10V G V=80dB Function=FLAT Ta=25˚C 5kW R g=100kW 22kW Collector current IC (mA ) Noise voltage NV (mV ) 1 3 10 30 100 100 IC =1mA G V=80dB Function=FLAT Ta=25˚C 5kW R g=100kW 22kW Collector to emitter voltage VCE (V) Noise voltage NV (mV )